Applied Science and Convergence Technology
,  volume 34 ,  issue 1 ,  pages 42-45

An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µm Gallium Nitride-on-Silicon Carbide Process

Publication type: Journal Article
Publication date: 2025-01-30
scimago Q3
wos Q4
SJR: 0.270
CiteScore: 1.8
Impact factor: 0.9
ISSN: 22886559, 12258822
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Lee S. et al. An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µm Gallium Nitride-on-Silicon Carbide Process // Applied Science and Convergence Technology. 2025. Vol. 34. No. 1. pp. 42-45.
GOST all authors (up to 50) Copy
Lee S., Ahn H., Jung H., Kim S., Choi I., Kang D. M. An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µm Gallium Nitride-on-Silicon Carbide Process // Applied Science and Convergence Technology. 2025. Vol. 34. No. 1. pp. 42-45.
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TY - JOUR
DO - 10.5757/asct.2025.34.1.42
UR - http://www.e-asct.org/journal/view.html?doi=10.5757/ASCT.2025.34.1.42
TI - An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µm Gallium Nitride-on-Silicon Carbide Process
T2 - Applied Science and Convergence Technology
AU - Lee, Sangheung
AU - Ahn, Hokyun
AU - Jung, Hyunwook
AU - Kim, Seong-Il
AU - Choi, Ilgyu
AU - Kang, Dong Min
PY - 2025
DA - 2025/01/30
PB - The Korean Vacuum Society
SP - 42-45
IS - 1
VL - 34
SN - 2288-6559
SN - 1225-8822
ER -
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@article{2025_Lee,
author = {Sangheung Lee and Hokyun Ahn and Hyunwook Jung and Seong-Il Kim and Ilgyu Choi and Dong Min Kang},
title = {An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µm Gallium Nitride-on-Silicon Carbide Process},
journal = {Applied Science and Convergence Technology},
year = {2025},
volume = {34},
publisher = {The Korean Vacuum Society},
month = {jan},
url = {http://www.e-asct.org/journal/view.html?doi=10.5757/ASCT.2025.34.1.42},
number = {1},
pages = {42--45},
doi = {10.5757/asct.2025.34.1.42}
}
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Lee, Sangheung, et al. “An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µm Gallium Nitride-on-Silicon Carbide Process.” Applied Science and Convergence Technology, vol. 34, no. 1, Jan. 2025, pp. 42-45. http://www.e-asct.org/journal/view.html?doi=10.5757/ASCT.2025.34.1.42.