Open Access
A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor
Publication type: Journal Article
Publication date: 2018-10-22
scimago Q2
wos Q3
SJR: 0.427
CiteScore: 4.7
Impact factor: 2.2
ISSN: 18820778, 18820786
General Physics and Astronomy
General Engineering
Abstract
In today's highly information-oriented society, a continuously increasing number of computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in cloud to sensor node devices in edge. Under the constraint of power consumption, energy-efficient computing is necessary to enable low-power operation and implement emerging algorithms such as machine learning. A steep-subthreshold-slope (SS) transistor can be a next-generation device technology platform for highly energy-efficient computing. Among several types of steep-SS transistors, the negative-capacitance field-effect transistor (NCFET) has recently become one of the most promising candidates in terms of on-current, process integration, and cost, coincident with the discovery of ferroelectric HfO2. In this review paper, the concept and recent research studies on NCFET are reviewed. Technical challenges and future prospects are discussed.
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71
Total citations:
71
Citations from 2024:
11
(15.49%)
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Kobayashi M. A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor // Applied Physics Express. 2018. Vol. 11. No. 11. p. 110101.
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Kobayashi M. A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor // Applied Physics Express. 2018. Vol. 11. No. 11. p. 110101.
Cite this
RIS
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TY - JOUR
DO - 10.7567/APEX.11.110101
UR - https://doi.org/10.7567/APEX.11.110101
TI - A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor
T2 - Applied Physics Express
AU - Kobayashi, Masaharu
PY - 2018
DA - 2018/10/22
PB - Japan Society of Applied Physics
SP - 110101
IS - 11
VL - 11
SN - 1882-0778
SN - 1882-0786
ER -
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BibTex (up to 50 authors)
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@article{2018_Kobayashi,
author = {Masaharu Kobayashi},
title = {A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor},
journal = {Applied Physics Express},
year = {2018},
volume = {11},
publisher = {Japan Society of Applied Physics},
month = {oct},
url = {https://doi.org/10.7567/APEX.11.110101},
number = {11},
pages = {110101},
doi = {10.7567/APEX.11.110101}
}
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MLA
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Kobayashi, Masaharu. “A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor.” Applied Physics Express, vol. 11, no. 11, Oct. 2018, p. 110101. https://doi.org/10.7567/APEX.11.110101.