Van der Waals materials attract attention in science and technology because of their anisotropic crystal structure and, accordingly, anisotropic properties such as birefringence, Young's modulus, thermal and electrical conductivity, etc. They open up opportunities for the creation of new electronic, photonic, optoelectronic, thermoelectric and many other devices with outstanding characteristics.
For example, arsenic trisulfide As2S3 and germanium disulfide GeS2 are unique van der Waals crystals with high measured refractive indices and birefringence. But a step before the compound is embedded in an optical device, its purity should be checked, since impurities significantly affect the optical properties of solids. It is also important to know the position of the crystallographic axes of a material with anisotropic properties for integration into the device. One of the ways to confirm the crystal structure and establish the orientation of the non-metallic substance under study is to use Raman spectroscopy. It is an easy-to-use (compared to radiography), non-invasive and, in many cases, non-destructive method (compared to chemical methods).
Therefore, an important task is the theoretical prediction of the Raman spectrum of light scattering of non-contaminated crystals in order to assess their degree of purity in reality for further experiments and applications. Inspired by this problem, we have already demonstrated the validity of our approach in the work [1] using the example of As2S3 and will soon publish a paper where the spectra for GeS2 were perfectly reproduced, given its very complex crystal structure. In addition, our calculated polar diagrams for Raman-active modes are in excellent agreement with the measured ones.
Thus, our method opens up great prospects for determining the crystallographic axes and verifying the purity of semiconductor materials by comparing the Ab Initio spectra with experimental ones.
1. Slavich, A. S., Ermolaev, G. A., Tatmyshevskiy, M. K., Toksumakov, A. N., Matveeva, O. G., Grudinin, D. V., Voronin K.V., Mazitov A., Kravtsov K. V. , Syuy A. V., Tsymbarenko D. M., Mironov M. S., Novikov S. M., Kruglov I., Ghazaryan D. A., Vyshnevyy A. A., Arsenin A. V., Volkov V. S., Novoselov, K. S. (2024). Exploring van der Waals materials with high anisotropy: geometrical and optical approaches. Light: Science & Applications, 13, 68.