Recent Progress in High‐Mobility Organic Transistors: A Reality Check
Alexandra F Paterson
1
,
Saumya Singh
2
,
Kealan J Fallon
3
,
Thomas Hodsden
4
,
Yang Han
4
,
Bob C. Schroeder
2
,
Martin Heeney
4
,
Iain McCulloch
1
,
Publication type: Journal Article
Publication date: 2018-07-18
scimago Q1
wos Q1
SJR: 8.851
CiteScore: 39.4
Impact factor: 26.8
ISSN: 09359648, 15214095
PubMed ID:
30022536
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
Over the past three decades, significant research efforts have focused on improving the charge carrier mobility of organic thin‐film transistors (OTFTs). In recent years, a commonly observed nonlinearity in OTFT current–voltage characteristics, known as the “kink” or “double slope,” has led to widespread mobility overestimations, contaminating the relevant literature. Here, published data from the past 30 years is reviewed to uncover the extent of the field‐effect mobility hype and identify the progress that has actually been achieved in the field of OTFTs. Present carrier‐mobility‐related challenges are identified, finding that reliable hole and electron mobility values of 20 and 10 cm2 V−1 s−1, respectively, have yet to be achieved. Based on the analysis, the literature is then reviewed to summarize the concepts behind the success of high‐performance p‐type polymers, along with the latest understanding of the design criteria that will enable further mobility enhancement in n‐type polymers and small molecules, and the reasons why high carrier mobility values have been consistently produced from small molecule/polymer blend semiconductors. Overall, this review brings together important information that aids reliable OTFT data analysis, while providing guidelines for the development of next‐generation organic semiconductors.
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Paterson A. F. et al. Recent Progress in High‐Mobility Organic Transistors: A Reality Check // Advanced Materials. 2018. Vol. 30. No. 36. p. 1801079.
GOST all authors (up to 50)
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Paterson A. F., Singh S., Fallon K. J., Hodsden T., Han Y., Schroeder B. C., Bronstein H. A., Heeney M., McCulloch I., Anthopoulos T. D. Recent Progress in High‐Mobility Organic Transistors: A Reality Check // Advanced Materials. 2018. Vol. 30. No. 36. p. 1801079.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1002/adma.201801079
UR - https://doi.org/10.1002/adma.201801079
TI - Recent Progress in High‐Mobility Organic Transistors: A Reality Check
T2 - Advanced Materials
AU - Paterson, Alexandra F
AU - Singh, Saumya
AU - Fallon, Kealan J
AU - Hodsden, Thomas
AU - Han, Yang
AU - Schroeder, Bob C.
AU - Bronstein, Hugo A.
AU - Heeney, Martin
AU - McCulloch, Iain
AU - Anthopoulos, Thomas D
PY - 2018
DA - 2018/07/18
PB - Wiley
SP - 1801079
IS - 36
VL - 30
PMID - 30022536
SN - 0935-9648
SN - 1521-4095
ER -
Cite this
BibTex (up to 50 authors)
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@article{2018_Paterson,
author = {Alexandra F Paterson and Saumya Singh and Kealan J Fallon and Thomas Hodsden and Yang Han and Bob C. Schroeder and Hugo A. Bronstein and Martin Heeney and Iain McCulloch and Thomas D Anthopoulos},
title = {Recent Progress in High‐Mobility Organic Transistors: A Reality Check},
journal = {Advanced Materials},
year = {2018},
volume = {30},
publisher = {Wiley},
month = {jul},
url = {https://doi.org/10.1002/adma.201801079},
number = {36},
pages = {1801079},
doi = {10.1002/adma.201801079}
}
Cite this
MLA
Copy
Paterson, Alexandra F., et al. “Recent Progress in High‐Mobility Organic Transistors: A Reality Check.” Advanced Materials, vol. 30, no. 36, Jul. 2018, p. 1801079. https://doi.org/10.1002/adma.201801079.