physica status solidi (c), volume 2, issue 6, pages 1869-1872
Spin‐resonant change of unlocking stress for dislocations in silicon
M V Badylevich
1
,
V. V. KVEDER
1
,
V. I. Orlov
1
,
Yu. A. Ossipyan
1
Publication type: Journal Article
Publication date: 2005-04-04
Journal:
physica status solidi (c)
SJR: —
CiteScore: —
Impact factor: —
ISSN: 16101634, 16101642, 18626351
Abstract
In this work we have observed a significant increase of unlocking stress for dislocations in Cz-Si caused by the microwave magnetic field in a condition of spin resonance corresponding to g-factor value of about 2.0. The result can be interpreted in terms of spin-dependent reactions of oxygen accumulated at dislocations. However, the specific atomistic model for the effect is still missing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.