Wiley
Physica Status Solidi (A) Applications and Materials Science
,  volume 219 ,  issue 1 ,  pages 2100459

Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon-on-Insulator-Based Transistor-Like Device

Dmitry Smolyakov 1
, 
A S Tarasov 1, 2
, 
Lev Shanidze 1, 3
, 
I A Bondarev 1, 3
, 
Filipp Baron 1
, 
Anna Lukyanenko 1, 2
, 
Ivan Yakovlev 1
, 
Mihail Volochaev 1
, 
Nikita Volkov 1
1
 
2
 
3
 
Publication type: Journal Article
Publication date: 2021-11-07
Wiley
scimago Q2
wos Q3
SJR: 0.416
CiteScore: 3.6
Impact factor: 1.9
ISSN: 18626300, 18626319
Materials Chemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Surfaces and Interfaces
Abstract

Herein, the AC magnetoresistance (MR) in the silicon‐on‐insulator (SOI)‐based Fe/Si/SiO2/p‐Si structure is presented. The structure is used for fabricating a back‐gate field‐effect pseudo‐metal–oxide–semiconductor field‐effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic‐field‐driven SOI‐based devices and high‐frequency circuits.

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Smolyakov D. et al. Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon-on-Insulator-Based Transistor-Like Device // Physica Status Solidi (A) Applications and Materials Science. 2021. Vol. 219. No. 1. p. 2100459.
GOST all authors (up to 50) Copy
Smolyakov D., Tarasov A. S., Shanidze L., Bondarev I. A., Baron F., Lukyanenko A., Yakovlev I., Volochaev M., Volkov N. Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon-on-Insulator-Based Transistor-Like Device // Physica Status Solidi (A) Applications and Materials Science. 2021. Vol. 219. No. 1. p. 2100459.
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RIS Copy
TY - JOUR
DO - 10.1002/PSSA.202100459
UR - https://doi.org/10.1002/PSSA.202100459
TI - Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon-on-Insulator-Based Transistor-Like Device
T2 - Physica Status Solidi (A) Applications and Materials Science
AU - Smolyakov, Dmitry
AU - Tarasov, A S
AU - Shanidze, Lev
AU - Bondarev, I A
AU - Baron, Filipp
AU - Lukyanenko, Anna
AU - Yakovlev, Ivan
AU - Volochaev, Mihail
AU - Volkov, Nikita
PY - 2021
DA - 2021/11/07
PB - Wiley
SP - 2100459
IS - 1
VL - 219
SN - 1862-6300
SN - 1862-6319
ER -
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@article{2021_Smolyakov,
author = {Dmitry Smolyakov and A S Tarasov and Lev Shanidze and I A Bondarev and Filipp Baron and Anna Lukyanenko and Ivan Yakovlev and Mihail Volochaev and Nikita Volkov},
title = {Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon-on-Insulator-Based Transistor-Like Device},
journal = {Physica Status Solidi (A) Applications and Materials Science},
year = {2021},
volume = {219},
publisher = {Wiley},
month = {nov},
url = {https://doi.org/10.1002/PSSA.202100459},
number = {1},
pages = {2100459},
doi = {10.1002/PSSA.202100459}
}
MLA
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Smolyakov, Dmitry, et al. “Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon-on-Insulator-Based Transistor-Like Device.” Physica Status Solidi (A) Applications and Materials Science, vol. 219, no. 1, Nov. 2021, p. 2100459. https://doi.org/10.1002/PSSA.202100459.