A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p-n Electrical Conduction
S. V. Ovsyannikov
1
,
Alexander E. Karkin
2
,
Natalia V Morozova
2
,
Vladimir V. Shchennikov
2
,
E. Bykova
1, 3
,
A. A. Tsirlin
5
,
K. Glazyrin
1, 6
,
Publication type: Journal Article
Publication date: 2014-10-27
scimago Q1
wos Q1
SJR: 8.851
CiteScore: 39.4
Impact factor: 26.8
ISSN: 09359648, 15214095
PubMed ID:
25348375
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
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49
Total citations:
49
Citations from 2024:
6
(12%)
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MLA
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GOST
Copy
Ovsyannikov S. V. et al. A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p-n Electrical Conduction // Advanced Materials. 2014. Vol. 26. No. 48. pp. 8185-8191.
GOST all authors (up to 50)
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Ovsyannikov S. V., Karkin A. E., Morozova N. V., Shchennikov V. V., Bykova E., Abakumov A. M., Tsirlin A. A., Glazyrin K., Dubrovinsky L. A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p-n Electrical Conduction // Advanced Materials. 2014. Vol. 26. No. 48. pp. 8185-8191.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1002/adma.201403304
UR - https://doi.org/10.1002/adma.201403304
TI - A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p-n Electrical Conduction
T2 - Advanced Materials
AU - Ovsyannikov, S. V.
AU - Karkin, Alexander E.
AU - Morozova, Natalia V
AU - Shchennikov, Vladimir V.
AU - Bykova, E.
AU - Abakumov, Artem M.
AU - Tsirlin, A. A.
AU - Glazyrin, K.
AU - Dubrovinsky, L.
PY - 2014
DA - 2014/10/27
PB - Wiley
SP - 8185-8191
IS - 48
VL - 26
PMID - 25348375
SN - 0935-9648
SN - 1521-4095
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2014_Ovsyannikov,
author = {S. V. Ovsyannikov and Alexander E. Karkin and Natalia V Morozova and Vladimir V. Shchennikov and E. Bykova and Artem M. Abakumov and A. A. Tsirlin and K. Glazyrin and L. Dubrovinsky},
title = {A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p-n Electrical Conduction},
journal = {Advanced Materials},
year = {2014},
volume = {26},
publisher = {Wiley},
month = {oct},
url = {https://doi.org/10.1002/adma.201403304},
number = {48},
pages = {8185--8191},
doi = {10.1002/adma.201403304}
}
Cite this
MLA
Copy
Ovsyannikov, S. V., et al. “A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p-n Electrical Conduction.” Advanced Materials, vol. 26, no. 48, Oct. 2014, pp. 8185-8191. https://doi.org/10.1002/adma.201403304.
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