Physica Status Solidi (A) Applications and Materials Science, volume 218, issue 1, pages 2000101

Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors

M.A. Reshchikov ¹

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Department of Physics Virginia Commonwealth University 701 West Grace Street Richmond VA 23220 USA |

Publication type: Journal Article

Publication date: 2020-06-22

Wiley

Journal: Physica Status Solidi (A) Applications and Materials Science

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Quartile WOS

Impact factor: 2

ISSN: 18626300, 18626319

DOI: 10.1002/pssa.202000101

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Materials Chemistry

Surfaces, Coatings and Films

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Surfaces and Interfaces

Abstract

The intensity of defect-related photoluminescence (PL) in semiconductors changes with temperature, and it usually decreases exponentially above some critical temperature, a process called the PL quenching. Herein, main mechanisms of PL quenching are reviewed. Most examples are given for defects in GaN as the most studied modern semiconductor, which has important applications in technology. Peculiarities of defect-related PL in I–VII, II–VI, and III–V compounds are also reviewed. Three basic mechanisms of PL quenching are distinguished. Most examples of PL quenching can be explained by the Schön–Klasens mechanism, whereas very few or even no confirmed cases can be found in support of the Seitz–Mott mechanism. Third mechanism, the abrupt and tunable quenching, is common for high-resistivity semiconductors. Temperature dependence of capture coefficients and a number of other reasons may affect the temperature dependence of PL intensity. The “negative quenching” or a significant rise in PL intensity with temperature is explained by a competition between recombination channels for minority carriers.

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Citations by publishers

	1 2 3 4 5 6 7 8 9
American Institute of Physics (AIP)	American Institute of Physics (AIP), 9, 21.43% American Institute of Physics (AIP) 9 publications, 21.43%
Wiley	Wiley, 8, 19.05% Wiley 8 publications, 19.05%
American Chemical Society (ACS)	American Chemical Society (ACS), 7, 16.67% American Chemical Society (ACS) 7 publications, 16.67%
Elsevier	Elsevier, 6, 14.29% Elsevier 6 publications, 14.29%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 4, 9.52% Royal Society of Chemistry (RSC) 4 publications, 9.52%
American Physical Society (APS)	American Physical Society (APS), 3, 7.14% American Physical Society (APS) 3 publications, 7.14%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 3, 7.14% Multidisciplinary Digital Publishing Institute (MDPI) 3 publications, 7.14%
IEEE	IEEE, 1, 2.38% IEEE 1 publication, 2.38%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 2.38% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 2.38%
	1 2 3 4 5 6 7 8 9

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Reshchikov M. Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors // Physica Status Solidi (A) Applications and Materials Science. 2020. Vol. 218. No. 1. p. 2000101.

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Reshchikov M. Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors // Physica Status Solidi (A) Applications and Materials Science. 2020. Vol. 218. No. 1. p. 2000101.

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TY - JOUR

DO - 10.1002/pssa.202000101

UR - https://doi.org/10.1002/pssa.202000101

TI - Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors

T2 - Physica Status Solidi (A) Applications and Materials Science

AU - Reshchikov, M.A.

PY - 2020

DA - 2020/06/22 00:00:00

PB - Wiley

SP - 2000101

IS - 1

VL - 218

SN - 1862-6300

SN - 1862-6319

ER -

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@article{2020_Reshchikov,

author = {M.A. Reshchikov},

title = {Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors},

journal = {Physica Status Solidi (A) Applications and Materials Science},

year = {2020},

volume = {218},

publisher = {Wiley},

month = {jun},

url = {https://doi.org/10.1002/pssa.202000101},

number = {1},

pages = {2000101},

doi = {10.1002/pssa.202000101}

}

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Reshchikov, M.A.. “Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors.” Physica Status Solidi (A) Applications and Materials Science, vol. 218, no. 1, Jun. 2020, p. 2000101. https://doi.org/10.1002/pssa.202000101.

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Wiley

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Physica Status Solidi (A) Applications and Materials Science

Quartile SCImago

Quartile WOS

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18626300 (Print)
18626319 (Electronic)