Journal of Electronic Materials, volume 35, issue 6, pages 1166-1173

The HgCdTe electron avalanche photodiode

J Beck ¹

C. Wan ¹

M Kinch ¹

J. Robinson ¹

P. Mitra ¹

R Scritchfield ¹

F Ma ²

J. Campbell ²

Hide authors affiliations Show authors affiliations: 2 affiliations

DRS Infrared Technologies, LP, Dallas |

Microelectronics Research Center, University of Texas, Austin |

Publication type: Journal Article

Publication date: 2006-06-01

Springer Nature

Journal: Journal of Electronic Materials

Quartile SCImago

Quartile WOS

Impact factor: 2.1

ISSN: 03615235, 1543186X

DOI: 10.1007/s11664-006-0237-3

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Materials Chemistry

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Abstract

Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain. This paper reports results obtained on long-, mid-, and short-wave cutoff infrared Hg1−xCdxTe EAPDs (10 µm, 5 µm, and 2.2 µm) that use a cylindrical “p-around-n” front side illuminated n+/n-/p geometry that favors electron injection into the gain region. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, k=αh/αe, of zero. Gains of greater than 1,000 have been measured in MWIR EAPDS without any sign of avalanche breakdown. Excess noise measurements on midwave infrared (MWIR) and SWIR EAPDs show a gain independent excess noise factor at high gains that has a limiting value less than 2. At 77 K, 4.3-µm cutoff devices show excess noise factors of close to unity out to gains of 1,000. A noise equivalent input of 7.5 photons at a 10-ns pulsed signal gain of 964 measured on an MWIR APD at 77 K provides an indication of the capability of this new device. The excess noise factor at room temperature on SWIR EAPDs, while still consistent with the k=0 operation, approaches a gain independent limiting value of just under 2 because of electron-phonon interactions expected at room temperature. The k=0 operation is explained by the band structure of the HgCdTe. Monte Carlo modeling based on the band structure and scattering models for HgCdTe predict the measured gain and excess noise behavior.

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Journal of Lightwave Technology	Journal of Lightwave Technology, 2, 1.79% Journal of Lightwave Technology 2 publications, 1.79%
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Fluctuation and Noise Letters	Fluctuation and Noise Letters, 1, 0.89% Fluctuation and Noise Letters 1 publication, 0.89%
Photonics	Photonics, 1, 0.89% Photonics 1 publication, 0.89%
Sensors	Sensors, 1, 0.89% Sensors 1 publication, 0.89%
Light: Science and Applications	Light: Science and Applications, 1, 0.89% Light: Science and Applications 1 publication, 0.89%
Transactions on Electrical and Electronic Materials	Transactions on Electrical and Electronic Materials, 1, 0.89% Transactions on Electrical and Electronic Materials 1 publication, 0.89%
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MRS Proceedings	MRS Proceedings, 1, 0.89% MRS Proceedings 1 publication, 0.89%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 1, 0.89% Journal of Materials Science: Materials in Electronics 1 publication, 0.89%
Scientific Reports	Scientific Reports, 1, 0.89% Scientific Reports 1 publication, 0.89%
Journal of Physics: Conference Series	Journal of Physics: Conference Series, 1, 0.89% Journal of Physics: Conference Series 1 publication, 0.89%
Semiconductor Science and Technology	Semiconductor Science and Technology, 1, 0.89% Semiconductor Science and Technology 1 publication, 0.89%
Chinese Physics B	Chinese Physics B, 1, 0.89% Chinese Physics B 1 publication, 0.89%
Optics and Laser Technology	Optics and Laser Technology, 1, 0.89% Optics and Laser Technology 1 publication, 0.89%
Microelectronic Engineering	Microelectronic Engineering, 1, 0.89% Microelectronic Engineering 1 publication, 0.89%
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Citations by publishers

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Springer Nature	Springer Nature, 29, 25.89% Springer Nature 29 publications, 25.89%
IEEE	IEEE, 19, 16.96% IEEE 19 publications, 16.96%
Optical Society of America	Optical Society of America, 10, 8.93% Optical Society of America 10 publications, 8.93%
Elsevier	Elsevier, 8, 7.14% Elsevier 8 publications, 7.14%
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SPIE	SPIE, 5, 4.46% SPIE 5 publications, 4.46%
IOP Publishing	IOP Publishing, 3, 2.68% IOP Publishing 3 publications, 2.68%
Wiley	Wiley, 3, 2.68% Wiley 3 publications, 2.68%
EDP Sciences	EDP Sciences, 2, 1.79% EDP Sciences 2 publications, 1.79%
World Scientific	World Scientific, 2, 1.79% World Scientific 2 publications, 1.79%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 2, 1.79% Multidisciplinary Digital Publishing Institute (MDPI) 2 publications, 1.79%
Institution of Engineering and Technology (IET)	Institution of Engineering and Technology (IET), 1, 0.89% Institution of Engineering and Technology (IET) 1 publication, 0.89%
The Korean Institute of Electrical and Electronic Material Engineers	The Korean Institute of Electrical and Electronic Material Engineers, 1, 0.89% The Korean Institute of Electrical and Electronic Material Engineers 1 publication, 0.89%
Materials Research Society	Materials Research Society, 1, 0.89% Materials Research Society 1 publication, 0.89%
Chinese Physical Society	Chinese Physical Society, 1, 0.89% Chinese Physical Society 1 publication, 0.89%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 0.89% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 0.89%
	5 10 15 20 25 30

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Beck J. et al. The HgCdTe electron avalanche photodiode // Journal of Electronic Materials. 2006. Vol. 35. No. 6. pp. 1166-1173.

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Beck J., Wan C., Kinch M., Robinson J., Mitra P., Scritchfield R., Ma F., Campbell J. The HgCdTe electron avalanche photodiode // Journal of Electronic Materials. 2006. Vol. 35. No. 6. pp. 1166-1173.

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TY - JOUR

DO - 10.1007/s11664-006-0237-3

UR - https://doi.org/10.1007/s11664-006-0237-3

TI - The HgCdTe electron avalanche photodiode

T2 - Journal of Electronic Materials

AU - Beck, J

AU - Wan, C.

AU - Kinch, M

AU - Robinson, J.

AU - Mitra, P.

AU - Scritchfield, R

AU - Ma, F

AU - Campbell, J.

PY - 2006

DA - 2006/06/01 00:00:00

PB - Springer Nature

SP - 1166-1173

IS - 6

VL - 35

SN - 0361-5235

SN - 1543-186X

ER -

BibTex |

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BibTex Copy

@article{2006_Beck,

author = {J Beck and C. Wan and M Kinch and J. Robinson and P. Mitra and R Scritchfield and F Ma and J. Campbell},

title = {The HgCdTe electron avalanche photodiode},

journal = {Journal of Electronic Materials},

year = {2006},

volume = {35},

publisher = {Springer Nature},

month = {jun},

url = {https://doi.org/10.1007/s11664-006-0237-3},

number = {6},

pages = {1166--1173},

doi = {10.1007/s11664-006-0237-3}

}

MLA

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MLA Copy

Beck, J., et al. “The HgCdTe electron avalanche photodiode.” Journal of Electronic Materials, vol. 35, no. 6, Jun. 2006, pp. 1166-1173. https://doi.org/10.1007/s11664-006-0237-3.

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Publisher

Springer Nature

Journal

Journal of Electronic Materials

Quartile SCImago

Quartile WOS

Impact factor

2.1

ISSN

03615235 (Print)
1543186X (Electronic)