Materials Science in Semiconductor Processing, volume 126, pages 105663
Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Smolyakov D A
1
,
Volkov N.V.
1
,
Bondarev M A
1
,
Vasiliev V. K.
2
,
Tarasov A.S.
,
Volochaev M N
1
,
Nikolskaya A A
2
,
Publication type: Journal Article
Publication date: 2021-05-01
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor: 4.1
ISSN: 13698001
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels E S1 (0) = 42 meV and E S2 (0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
Citations by journals
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Physica Status Solidi (a)
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Physica Status Solidi (a)
1 publication, 50%
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Journal of Experimental and Theoretical Physics
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Journal of Experimental and Theoretical Physics
1 publication, 50%
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1
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Citations by publishers
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Wiley
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Wiley
1 publication, 50%
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Pleiades Publishing
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Pleiades Publishing
1 publication, 50%
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1
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Smolyakov D. A. et al. Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect // Materials Science in Semiconductor Processing. 2021. Vol. 126. p. 105663.
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Smolyakov D. A., Tarasov A., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N., Tarasov A. S. Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect // Materials Science in Semiconductor Processing. 2021. Vol. 126. p. 105663.
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TY - JOUR
DO - 10.1016/J.MSSP.2021.105663
UR - https://doi.org/10.1016%2FJ.MSSP.2021.105663
TI - Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
T2 - Materials Science in Semiconductor Processing
AU - Smolyakov, D A
AU - Tarasov, A.S.
AU - Bondarev, M A
AU - Nikolskaya, A A
AU - Vasiliev, V. K.
AU - Volochaev, M N
AU - Volkov, N.V.
AU - Tarasov, A S
PY - 2021
DA - 2021/05/01 00:00:00
PB - Elsevier
SP - 105663
VL - 126
SN - 1369-8001
ER -
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@article{2021_Smolyakov,
author = {D A Smolyakov and A.S. Tarasov and M A Bondarev and A A Nikolskaya and V. K. Vasiliev and M N Volochaev and N.V. Volkov and A S Tarasov},
title = {Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect},
journal = {Materials Science in Semiconductor Processing},
year = {2021},
volume = {126},
publisher = {Elsevier},
month = {may},
url = {https://doi.org/10.1016%2FJ.MSSP.2021.105663},
pages = {105663},
doi = {10.1016/J.MSSP.2021.105663}
}