Materials Letters

, volume 209 , pages 558-561

Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector

Y P Qian ¹

X L Chu ²

H.Z. Shi ¹

W. K. Zhu ¹

K. Wang ¹

X K Huang ¹

H. Wang ¹

S L Wang ¹

Peigang Li ^{3, 4}

Xiao-Hong Zhang ⁵

Weihua Tang ⁶

Hide authors affiliations Show authors affiliations: 6 affiliations

Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China |

State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China |

Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China. |

⁴

⁵

China Aerospace Academy of Systems Science and Engineering, Beijing 100876, China |

⁶

Publication type: Journal Article

Publication date: 2017-12-01

Elsevier

Materials Letters

scimago Q2

wos Q3

SJR: 0.591

CiteScore: 5.4

Impact factor: 2.7

ISSN: 0167577X, 18734979

DOI: 10.1016/j.matlet.2017.08.052

Copy DOI

Condensed Matter Physics

General Materials Science

Mechanical Engineering

Mechanics of Materials

Abstract

The p-type high insulating thin films were obtained by doping Mg into β-Ga2O3. Thin films with various Mg concentrations were deposited on (0 0 0 1) c-plane Al2O3 substrate by radio frequency magnetron sputtering followed by post-annealing treatment. The crystal structure expanded due to the substitution of the trivalent Ga3+ with the divalent Mg2+ in a larger ion radius. The Fermi level (EF) of the Mg doped film is closer to the valence band, exhibiting a characteristic of weak p-type. The Mg doped Ga2O3 thin films were used to construct the metal/semiconductor/metal (MSM) structure, and the devices showed a high resistance (4.1 pA at 10 V), a high sensitivity (8.7 × 105%), a high responsivity (23.8 mA/W) and a short decay time (0.02 s) under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetector.

Found

1 citation

Almaev Aleksei

🥼 🤝

PhD in Physics and Mathematics, associate professor

75 publications, 626 citations, 6 reviews

h-index: 15

Tomsk State University

Research interests

Ga2O3

Metal oxide semiconductors

Wide-band semiconductors

1 citation

RAMZAN MUHAMMAD

49 publications, 708 citations

h-index: 15

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GOST Copy

Qian Y. P. et al. Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector // Materials Letters. 2017. Vol. 209. pp. 558-561.

GOST all authors (up to 50) Copy

Qian Y. P., Chu X. L., Shi H., Zhu W. K., Wang K., Huang X. K., Wang H., Wang S. L., Li P., Zhang X., Tang W. Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector // Materials Letters. 2017. Vol. 209. pp. 558-561.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1016/j.matlet.2017.08.052

UR - https://doi.org/10.1016/j.matlet.2017.08.052

TI - Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector

T2 - Materials Letters

AU - Qian, Y P

AU - Chu, X L

AU - Shi, H.Z.

AU - Zhu, W. K.

AU - Wang, K.

AU - Huang, X K

AU - Wang, H.

AU - Wang, S L

AU - Li, Peigang

AU - Zhang, Xiao-Hong

AU - Tang, Weihua

PY - 2017

DA - 2017/12/01

PB - Elsevier

SP - 558-561

VL - 209

SN - 0167-577X

SN - 1873-4979

ER -

BibTex

Cite this

BibTex (up to 50 authors) Copy

@article{2017_Qian,

author = {Y P Qian and X L Chu and H.Z. Shi and W. K. Zhu and K. Wang and X K Huang and H. Wang and S L Wang and Peigang Li and Xiao-Hong Zhang and Weihua Tang},

title = {Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector},

journal = {Materials Letters},

year = {2017},

volume = {209},

publisher = {Elsevier},

month = {dec},

url = {https://doi.org/10.1016/j.matlet.2017.08.052},

pages = {558--561},

doi = {10.1016/j.matlet.2017.08.052}

}

Publisher

Elsevier

Journal

Materials Letters

scimago Q2

wos Q3

SJR

0.591

CiteScore

5.4

Impact factor

2.7

ISSN

0167577X (Print)

18734979