P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Ekaterine Chikoidze
1
,
Adel Fellous
1
,
A. Perez-Tomas
2
,
Guillaume Sauthier
2
,
Tamar Tchelidze
3
,
C Ton-That
4
,
Tung Thanh Huynh
4
,
Mark Phillips
4
,
Stephen A O Russell
5
,
M. R. Jennings
5
,
Bruno Bérini
1
,
François Jomard
1
,
Yves Dumont
1
1
2
Publication type: Journal Article
Publication date: 2017-12-01
scimago Q1
wos Q1
SJR: 2.278
CiteScore: 17.1
Impact factor: 9.7
ISSN: 25425293
General Materials Science
Physics and Astronomy (miscellaneous)
Energy (miscellaneous)
Abstract
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.
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212
Total citations:
212
Citations from 2024:
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(27.36%)
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Chikoidze E. et al. P-type β-gallium oxide: A new perspective for power and optoelectronic devices // Materials Today Physics. 2017. Vol. 3. pp. 118-126.
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Chikoidze E., Fellous A., Perez-Tomas A., Sauthier G., Tchelidze T., Ton-That C., Huynh T. T., Phillips M., Russell S. A. O., Jennings M. R., Bérini B., Jomard F., Dumont Y. P-type β-gallium oxide: A new perspective for power and optoelectronic devices // Materials Today Physics. 2017. Vol. 3. pp. 118-126.
Cite this
RIS
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TY - JOUR
DO - 10.1016/j.mtphys.2017.10.002
UR - https://doi.org/10.1016/j.mtphys.2017.10.002
TI - P-type β-gallium oxide: A new perspective for power and optoelectronic devices
T2 - Materials Today Physics
AU - Chikoidze, Ekaterine
AU - Fellous, Adel
AU - Perez-Tomas, A.
AU - Sauthier, Guillaume
AU - Tchelidze, Tamar
AU - Ton-That, C
AU - Huynh, Tung Thanh
AU - Phillips, Mark
AU - Russell, Stephen A O
AU - Jennings, M. R.
AU - Bérini, Bruno
AU - Jomard, François
AU - Dumont, Yves
PY - 2017
DA - 2017/12/01
PB - Elsevier
SP - 118-126
VL - 3
SN - 2542-5293
ER -
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@article{2017_Chikoidze,
author = {Ekaterine Chikoidze and Adel Fellous and A. Perez-Tomas and Guillaume Sauthier and Tamar Tchelidze and C Ton-That and Tung Thanh Huynh and Mark Phillips and Stephen A O Russell and M. R. Jennings and Bruno Bérini and François Jomard and Yves Dumont},
title = {P-type β-gallium oxide: A new perspective for power and optoelectronic devices},
journal = {Materials Today Physics},
year = {2017},
volume = {3},
publisher = {Elsevier},
month = {dec},
url = {https://doi.org/10.1016/j.mtphys.2017.10.002},
pages = {118--126},
doi = {10.1016/j.mtphys.2017.10.002}
}