Semiconductors and Semimetals, pages 1-57

Type-II Superlattice Infrared Detectors

D.Z. Ting

Alexander Soibel

Linda Höglund

Jean Nguyen

Cory J. Hill

Arezou Khoshakhlagh

Sarath D. Gunapala

Publication type: Book Chapter

Publication date: 2011-01-01

Elsevier

Journal: Semiconductors and Semimetals

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Impact factor: —

ISSN: 00808784

DOI: 10.1016/B978-0-12-381337-4.00001-2

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Abstract

This chapter provides an overview of type-II superlattice infrared detectors. The type-II InAs/GaSb superlattices have several fundamental properties that make them suitable for infrared detection: (1) their band gaps can be made arbitrarily small by design, (2) they are more immune to band-to-band tunneling compared with bulk material, (3) the judicious use of strain in type-II InAs/GaInSb strained layer superlattice (SLS) can enhance its absorption strength over that of the type-II InAs/GaSb superlattice to a level comparable with HgVdTe (MCT), and (4) type-II InAs/Ga(In)Sb superlattices also reduce Auger recombination. In addition, the dark current characteristics of type-II superlattice-based single element long-wavelength infrared (LWIR) detectors are currently approaching state-of-the-art MCT detector. Noise measurements highlight the need for surface leakage suppression, which can be tackled by improved etching, passivation, and device design. The chapter also describes the principles behind advanced superlattice infrared detectors based on heterostructure designs. It also explores some aspects of device fabrication and characterization.

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Applied Physics Letters	Applied Physics Letters, 8, 10.53% Applied Physics Letters 8 publications, 10.53%
Proceedings of SPIE - The International Society for Optical Engineering	Proceedings of SPIE - The International Society for Optical Engineering, 7, 9.21% Proceedings of SPIE - The International Society for Optical Engineering 7 publications, 9.21%
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Journal of Electronic Materials	Journal of Electronic Materials, 3, 3.95% Journal of Electronic Materials 3 publications, 3.95%
IEEE Transactions on Electron Devices	IEEE Transactions on Electron Devices, 3, 3.95% IEEE Transactions on Electron Devices 3 publications, 3.95%
Journal Physics D: Applied Physics	Journal Physics D: Applied Physics, 2, 2.63% Journal Physics D: Applied Physics 2 publications, 2.63%
Semiconductor Science and Technology	Semiconductor Science and Technology, 2, 2.63% Semiconductor Science and Technology 2 publications, 2.63%
Nanoscale	Nanoscale, 2, 2.63% Nanoscale 2 publications, 2.63%
IEEE Photonics Technology Letters	IEEE Photonics Technology Letters, 2, 2.63% IEEE Photonics Technology Letters 2 publications, 2.63%
Applied Physics Reviews	Applied Physics Reviews, 1, 1.32% Applied Physics Reviews 1 publication, 1.32%
AIP Advances	AIP Advances, 1, 1.32% AIP Advances 1 publication, 1.32%
Journal of Applied Physics	Journal of Applied Physics, 1, 1.32% Journal of Applied Physics 1 publication, 1.32%
Electronics (Switzerland)	Electronics (Switzerland), 1, 1.32% Electronics (Switzerland) 1 publication, 1.32%
Sensors	Sensors, 1, 1.32% Sensors 1 publication, 1.32%
Optical and Quantum Electronics	Optical and Quantum Electronics, 1, 1.32% Optical and Quantum Electronics 1 publication, 1.32%
Nano Research	Nano Research, 1, 1.32% Nano Research 1 publication, 1.32%
Solar Energy Materials and Solar Cells	Solar Energy Materials and Solar Cells, 1, 1.32% Solar Energy Materials and Solar Cells 1 publication, 1.32%
Reports on Progress in Physics	Reports on Progress in Physics, 1, 1.32% Reports on Progress in Physics 1 publication, 1.32%
Journal of Physics Condensed Matter	Journal of Physics Condensed Matter, 1, 1.32% Journal of Physics Condensed Matter 1 publication, 1.32%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1, 1.32% Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 1 publication, 1.32%
Small	Small, 1, 1.32% Small 1 publication, 1.32%
ACS applied materials & interfaces	ACS applied materials & interfaces, 1, 1.32% ACS applied materials & interfaces 1 publication, 1.32%
Micro and Nanostructures	Micro and Nanostructures, 1, 1.32% Micro and Nanostructures 1 publication, 1.32%
Applied Surface Science	Applied Surface Science, 1, 1.32% Applied Surface Science 1 publication, 1.32%
Crystals	Crystals, 1, 1.32% Crystals 1 publication, 1.32%
Applied Optics	Applied Optics, 1, 1.32% Applied Optics 1 publication, 1.32%
Bulletin of the Lebedev Physics Institute	Bulletin of the Lebedev Physics Institute, 1, 1.32% Bulletin of the Lebedev Physics Institute 1 publication, 1.32%
Nanotechnology	Nanotechnology, 1, 1.32% Nanotechnology 1 publication, 1.32%
	1 2 3 4 5 6 7 8

Citations by publishers

	2 4 6 8 10 12
American Institute of Physics (AIP)	American Institute of Physics (AIP), 11, 14.47% American Institute of Physics (AIP) 11 publications, 14.47%
Elsevier	Elsevier, 11, 14.47% Elsevier 11 publications, 14.47%
IOP Publishing	IOP Publishing, 7, 9.21% IOP Publishing 7 publications, 9.21%
SPIE	SPIE, 7, 9.21% SPIE 7 publications, 9.21%
IEEE	IEEE, 7, 9.21% IEEE 7 publications, 9.21%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 6, 7.89% Multidisciplinary Digital Publishing Institute (MDPI) 6 publications, 7.89%
Springer Nature	Springer Nature, 5, 6.58% Springer Nature 5 publications, 6.58%
Wiley	Wiley, 3, 3.95% Wiley 3 publications, 3.95%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 2, 2.63% Royal Society of Chemistry (RSC) 2 publications, 2.63%
Optical Society of America	Optical Society of America, 2, 2.63% Optical Society of America 2 publications, 2.63%
Japan Society of Applied Physics	Japan Society of Applied Physics, 1, 1.32% Japan Society of Applied Physics 1 publication, 1.32%
American Chemical Society (ACS)	American Chemical Society (ACS), 1, 1.32% American Chemical Society (ACS) 1 publication, 1.32%
Pleiades Publishing	Pleiades Publishing, 1, 1.32% Pleiades Publishing 1 publication, 1.32%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 1.32% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 1.32%
	2 4 6 8 10 12

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Ting D. et al. Type-II Superlattice Infrared Detectors // Semiconductors and Semimetals. 2011. pp. 1-57.

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Ting D., Soibel A., Höglund L., Nguyen J., Hill C. J., Khoshakhlagh A., Gunapala S. D. Type-II Superlattice Infrared Detectors // Semiconductors and Semimetals. 2011. pp. 1-57.

RIS |

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RIS Copy

TY - GENERIC

DO - 10.1016/B978-0-12-381337-4.00001-2

UR - https://doi.org/10.1016/B978-0-12-381337-4.00001-2

TI - Type-II Superlattice Infrared Detectors

T2 - Semiconductors and Semimetals

AU - Ting, D.Z.

AU - Soibel, Alexander

AU - Höglund, Linda

AU - Nguyen, Jean

AU - Hill, Cory J.

AU - Khoshakhlagh, Arezou

AU - Gunapala, Sarath D.

PY - 2011

DA - 2011/01/01 00:00:00

PB - Elsevier

SP - 1-57

SN - 0080-8784

ER -

BibTex

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BibTex Copy

@incollection{2011_Ting,

author = {D.Z. Ting and Alexander Soibel and Linda Höglund and Jean Nguyen and Cory J. Hill and Arezou Khoshakhlagh and Sarath D. Gunapala},

title = {Type-II Superlattice Infrared Detectors},

publisher = {Elsevier},

year = {2011},

pages = {1--57},

month = {jan}

}

Found error?

Publisher

Elsevier

Journal

Semiconductors and Semimetals

Quartile SCImago

—

Quartile WOS

—

Impact factor

—

ISSN

00808784 (Print)