Semiconductors and Semimetals, pages 1-57

Type-II Superlattice Infrared Detectors

D.Z. Ting

Alexander Soibel

Linda Höglund

Jean Nguyen

Cory J. Hill

Arezou Khoshakhlagh

Sarath D. Gunapala

Publication type: Book Chapter

Publication date: 2011-01-01

Elsevier

Journal: Semiconductors and Semimetals

SJR: —

CiteScore: 1.6

Impact factor: —

ISSN: 00808784

DOI: 10.1016/B978-0-12-381337-4.00001-2

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Abstract

This chapter provides an overview of type-II superlattice infrared detectors. The type-II InAs/GaSb superlattices have several fundamental properties that make them suitable for infrared detection: (1) their band gaps can be made arbitrarily small by design, (2) they are more immune to band-to-band tunneling compared with bulk material, (3) the judicious use of strain in type-II InAs/GaInSb strained layer superlattice (SLS) can enhance its absorption strength over that of the type-II InAs/GaSb superlattice to a level comparable with HgVdTe (MCT), and (4) type-II InAs/Ga(In)Sb superlattices also reduce Auger recombination. In addition, the dark current characteristics of type-II superlattice-based single element long-wavelength infrared (LWIR) detectors are currently approaching state-of-the-art MCT detector. Noise measurements highlight the need for surface leakage suppression, which can be tackled by improved etching, passivation, and device design. The chapter also describes the principles behind advanced superlattice infrared detectors based on heterostructure designs. It also explores some aspects of device fabrication and characterization.

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Ting D. et al. Type-II Superlattice Infrared Detectors // Semiconductors and Semimetals. 2011. pp. 1-57.

GOST all authors (up to 50) Copy

Ting D., Soibel A., Höglund L., Nguyen J., Hill C. J., Khoshakhlagh A., Gunapala S. D. Type-II Superlattice Infrared Detectors // Semiconductors and Semimetals. 2011. pp. 1-57.

RIS |

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RIS Copy

TY - GENERIC

DO - 10.1016/B978-0-12-381337-4.00001-2

UR - https://doi.org/10.1016/B978-0-12-381337-4.00001-2

TI - Type-II Superlattice Infrared Detectors

T2 - Semiconductors and Semimetals

AU - Ting, D.Z.

AU - Soibel, Alexander

AU - Höglund, Linda

AU - Nguyen, Jean

AU - Hill, Cory J.

AU - Khoshakhlagh, Arezou

AU - Gunapala, Sarath D.

PY - 2011

DA - 2011/01/01

PB - Elsevier

SP - 1-57

SN - 0080-8784

ER -

BibTex

Cite this

BibTex (up to 50 authors) Copy

@incollection{2011_Ting,

author = {D.Z. Ting and Alexander Soibel and Linda Höglund and Jean Nguyen and Cory J. Hill and Arezou Khoshakhlagh and Sarath D. Gunapala},

title = {Type-II Superlattice Infrared Detectors},

publisher = {Elsevier},

year = {2011},

pages = {1--57},

month = {jan}

}

Found error?

Publisher

Elsevier

Journal

Semiconductors and Semimetals

SJR

—

CiteScore

1.6

Impact factor

—

ISSN

00808784 (Print)