Thin Solid Films

, том 616 , страницы 482-501

Atomically-thin layered films for device applications based upon 2D TMDC materials

Тип публикации: Journal Article

Дата публикации: 2016-10-01

Elsevier

Thin Solid Films

SCImago Q2

WOS Q3

БС1

SJR: 0.408

CiteScore: 4.3

Impact factor: 2.4

ISSN: 00406090, 18792731

DOI: 10.1016/j.tsf.2016.08.068

Скопировать DOI

Materials Chemistry

Metals and Alloys

Surfaces, Coatings and Films

Electronic, Optical and Magnetic Materials

Surfaces and Interfaces

Краткое описание

This review seeks to cover recent developments in research on 2D layered materials, specifically transition-metal dichalcogenides (TMDCs), from a thin film perspective. Based upon materials which have a long and fruitful history, these TMDCs may provide significant opportunities for device applications in their atomically thin form.

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McDonnell S., Wallace R. M. Atomically-thin layered films for device applications based upon 2D TMDC materials // Thin Solid Films. 2016. Vol. 616. pp. 482-501.

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McDonnell S., Wallace R. M. Atomically-thin layered films for device applications based upon 2D TMDC materials // Thin Solid Films. 2016. Vol. 616. pp. 482-501.

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TY - JOUR

DO - 10.1016/j.tsf.2016.08.068

UR - https://doi.org/10.1016/j.tsf.2016.08.068

TI - Atomically-thin layered films for device applications based upon 2D TMDC materials

T2 - Thin Solid Films

AU - McDonnell, Stephen

AU - Wallace, Robert M

PY - 2016

DA - 2016/10/01

PB - Elsevier

SP - 482-501

VL - 616

SN - 0040-6090

SN - 1879-2731

ER -

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@article{2016_McDonnell,

author = {Stephen McDonnell and Robert M Wallace},

title = {Atomically-thin layered films for device applications based upon 2D TMDC materials},

journal = {Thin Solid Films},

year = {2016},

volume = {616},

publisher = {Elsevier},

month = {oct},

url = {https://doi.org/10.1016/j.tsf.2016.08.068},

pages = {482--501},

doi = {10.1016/j.tsf.2016.08.068}

}

Издатель

Elsevier

Журнал

Thin Solid Films

SCImago Q2

WOS Q3

БС1

SJR

0.408

CiteScore

4.3

Impact factor

2.4

ISSN

00406090 (Print, Electronic)

18792731

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