Chemistry of Materials

, том 30 , издание 23 , страницы 8465-8475

Thermal Atomic Layer Etching of Silicon Using O₂, HF, and Al(CH₃)₃ as the Reactants

Тип публикации: Journal Article

Дата публикации: 2018-11-05

American Chemical Society (ACS)

Chemistry of Materials

SCImago Q1

Tоп 10% SCImago

WOS Q1

БС1

SJR: 1.796

CiteScore: 11.9

Impact factor: 7.1

ISSN: 08974756, 15205002

DOI: 10.1021/acs.chemmater.8b02745

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Materials Chemistry

General Chemistry

General Chemical Engineering

Краткое описание

Thermal atomic layer etching (ALE) of silicon was performed using O2, HF, and Al(CH3)3 as the reactants at temperatures from 225 to 290 °C. This thermal etching process is based on Si oxidation usi...

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Abdulagatov A. I., George S. M. Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants // Chemistry of Materials. 2018. Vol. 30. No. 23. pp. 8465-8475.

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Abdulagatov A. I., George S. M. Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants // Chemistry of Materials. 2018. Vol. 30. No. 23. pp. 8465-8475.

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TY - JOUR

DO - 10.1021/acs.chemmater.8b02745

UR - https://doi.org/10.1021/acs.chemmater.8b02745

TI - Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants

T2 - Chemistry of Materials

AU - Abdulagatov, Aziz I.

AU - George, Steven M.

PY - 2018

DA - 2018/11/05

PB - American Chemical Society (ACS)

SP - 8465-8475

IS - 23

VL - 30

SN - 0897-4756

SN - 1520-5002

ER -

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@article{2018_Abdulagatov,

author = {Aziz I. Abdulagatov and Steven M. George},

title = {Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants},

journal = {Chemistry of Materials},

year = {2018},

volume = {30},

publisher = {American Chemical Society (ACS)},

month = {nov},

url = {https://doi.org/10.1021/acs.chemmater.8b02745},

number = {23},

pages = {8465--8475},

doi = {10.1021/acs.chemmater.8b02745}

}

MLA

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Abdulagatov, Aziz I., and Steven M. George. “Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants.” Chemistry of Materials, vol. 30, no. 23, Nov. 2018, pp. 8465-8475. https://doi.org/10.1021/acs.chemmater.8b02745.

Издатель

American Chemical Society (ACS)

Журнал

Chemistry of Materials

SCImago Q1

Tоп 10% SCImago

WOS Q1

БС1

SJR

1.796

CiteScore

11.9