Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants
Publication type: Journal Article
Publication date: 2018-11-05
scimago Q1
wos Q1
SJR: 2.065
CiteScore: 12.0
Impact factor: 7.0
ISSN: 08974756, 15205002
Materials Chemistry
General Chemistry
General Chemical Engineering
Abstract
Thermal atomic layer etching (ALE) of silicon was performed using O2, HF, and Al(CH3)3 as the reactants at temperatures from 225 to 290 °C. This thermal etching process is based on Si oxidation usi...
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Metrics
55
Total citations:
55
Citations from 2024:
7
(12%)
The most citing journal
Citations in journal:
15
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MLA
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GOST
Copy
Abdulagatov A. I., George S. M. Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants // Chemistry of Materials. 2018. Vol. 30. No. 23. pp. 8465-8475.
GOST all authors (up to 50)
Copy
Abdulagatov A. I., George S. M. Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants // Chemistry of Materials. 2018. Vol. 30. No. 23. pp. 8465-8475.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1021/acs.chemmater.8b02745
UR - https://doi.org/10.1021/acs.chemmater.8b02745
TI - Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants
T2 - Chemistry of Materials
AU - Abdulagatov, Aziz I.
AU - George, Steven M.
PY - 2018
DA - 2018/11/05
PB - American Chemical Society (ACS)
SP - 8465-8475
IS - 23
VL - 30
SN - 0897-4756
SN - 1520-5002
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2018_Abdulagatov,
author = {Aziz I. Abdulagatov and Steven M. George},
title = {Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants},
journal = {Chemistry of Materials},
year = {2018},
volume = {30},
publisher = {American Chemical Society (ACS)},
month = {nov},
url = {https://doi.org/10.1021/acs.chemmater.8b02745},
number = {23},
pages = {8465--8475},
doi = {10.1021/acs.chemmater.8b02745}
}
Cite this
MLA
Copy
Abdulagatov, Aziz I., and Steven M. George. “Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants.” Chemistry of Materials, vol. 30, no. 23, Nov. 2018, pp. 8465-8475. https://doi.org/10.1021/acs.chemmater.8b02745.