ACS Nano, volume 15, issue 9, pages 14891-14902
Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface
Dmitriyeva Anna
1
,
Mikheev Vitalii
1
,
Zarubin S
1
,
Chouprik A. A.
1
,
Vinai G.
2
,
Polewczyk V.
2
,
Torelli Piero
2
,
Matveyev Y.
3
,
Karateev Igor
4
,
Yang Qi-Bin
5
,
Chen Zhaojin
5
,
Tao L. L.
6
,
Tsymbal E.Y.
6
,
3
Deutsches Elektronen-Synchrotron, 85 Notkestraße, Hamburg, D-22607, Germany
|
5
School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
|
6
Department of Physics and Astronomy, University of Nebraska−Lincoln, Lincoln, Nebraska 68588, United States
|
Publication type: Journal Article
Publication date: 2021-09-01
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO2-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, a strong charge-mediated magnetoelectric coupling at the Ni/HfO2 interface has been predicted using density functional theory calculations. Here, we report on the experimental evidence of such magnetoelectric coupling at the Ni/Hf0.5Zr0.5O2(HZO) interface. Using a combination of operando XAS/XMCD and HAXPES/MCDAD techniques, we probe element-selectively the local magnetic properties at the Ni/HZO interface in functional Au/Co/Ni/HZO/W capacitors and demonstrate clear evidence of the ferroelectric polarization effect on the magnetic response of a nanometer-thick Ni marker layer. The observed magnetoelectric effect and the electronic band lineup of the Ni/HZO interface are interpreted based on the results of our theoretical modeling. It elucidates the critical role of an ultrathin NiO interlayer, which controls the sign of the magnetoelectric effect as well as provides a realistic band offset at the Ni/HZO interface, in agreement with the experiment. Our results hold promise for the use of ferroelectric HfO2-based composite multiferroics for the design of multifunctional devices compatible with modern semiconductor technology.
Citations by journals
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1
2
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Materials Horizons
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2 publications, 14.29%
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Advanced Materials Interfaces
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2 publications, 14.29%
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npj Computational Materials
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npj Computational Materials
1 publication, 7.14%
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Journal of Magnetism and Magnetic Materials
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Journal of Magnetism and Magnetic Materials
1 publication, 7.14%
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Nano Letters
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Nano Letters
1 publication, 7.14%
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Advanced Functional Materials
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1 publication, 7.14%
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Small
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Small
1 publication, 7.14%
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Physical Review Applied
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Physical Review Applied
1 publication, 7.14%
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Nature Communications
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Nature Communications
1 publication, 7.14%
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Applied Physics Express
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Applied Physics Express
1 publication, 7.14%
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Proceedings of the National Academy of Sciences of the United States of America
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Proceedings of the National Academy of Sciences of the United States of America
1 publication, 7.14%
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Scientific Reports
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1 publication, 7.14%
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1
2
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Citations by publishers
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1
2
3
4
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Wiley
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Wiley
4 publications, 28.57%
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Springer Nature
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Springer Nature
3 publications, 21.43%
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Royal Society of Chemistry (RSC)
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Royal Society of Chemistry (RSC)
2 publications, 14.29%
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Elsevier
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Elsevier
1 publication, 7.14%
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American Chemical Society (ACS)
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American Chemical Society (ACS)
1 publication, 7.14%
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American Physical Society (APS)
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American Physical Society (APS)
1 publication, 7.14%
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IOP Publishing
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IOP Publishing
1 publication, 7.14%
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Proceedings of the National Academy of Sciences (PNAS)
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Proceedings of the National Academy of Sciences (PNAS)
1 publication, 7.14%
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1
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3
4
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Dmitriyeva A. et al. Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface // ACS Nano. 2021. Vol. 15. No. 9. pp. 14891-14902.
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Dmitriyeva A., Mikheev V., Zarubin S., Chouprik A. A., Vinai G., Polewczyk V., Torelli P., Matveyev Y., Schlueter C., Karateev I., Yang Q., Chen Z., Tao L. L., Tsymbal E., Zenkevich A. Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface // ACS Nano. 2021. Vol. 15. No. 9. pp. 14891-14902.
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TY - JOUR
DO - 10.1021/acsnano.1c05001
UR - https://doi.org/10.1021%2Facsnano.1c05001
TI - Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface
T2 - ACS Nano
AU - Dmitriyeva, Anna
AU - Mikheev, Vitalii
AU - Karateev, Igor
AU - Chen, Zhaojin
AU - Vinai, G.
AU - Yang, Qi-Bin
AU - Tsymbal, E.Y.
AU - Zenkevich, A.
AU - Zarubin, S
AU - Chouprik, A. A.
AU - Polewczyk, V.
AU - Torelli, Piero
AU - Matveyev, Y.
AU - Schlueter, Christoph
AU - Tao, L. L.
PY - 2021
DA - 2021/09/01 00:00:00
PB - American Chemical Society (ACS)
SP - 14891-14902
IS - 9
VL - 15
SN - 1936-0851
SN - 1936-086X
ER -
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@article{2021_Dmitriyeva,
author = {Anna Dmitriyeva and Vitalii Mikheev and Igor Karateev and Zhaojin Chen and G. Vinai and Qi-Bin Yang and E.Y. Tsymbal and A. Zenkevich and S Zarubin and A. A. Chouprik and V. Polewczyk and Piero Torelli and Y. Matveyev and Christoph Schlueter and L. L. Tao},
title = {Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface},
journal = {ACS Nano},
year = {2021},
volume = {15},
publisher = {American Chemical Society (ACS)},
month = {sep},
url = {https://doi.org/10.1021%2Facsnano.1c05001},
number = {9},
pages = {14891--14902},
doi = {10.1021/acsnano.1c05001}
}
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Dmitriyeva, Anna, et al. “Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface.” ACS Nano, vol. 15, no. 9, Sep. 2021, pp. 14891-14902. https://doi.org/10.1021%2Facsnano.1c05001.