Journal of Physical Chemistry C, volume 118, issue 51, pages 30315-30324

Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching

Stefan Tinck ¹

Erik C. Neyts ¹

Annemie Bogaerts ¹

Hide authors affiliations Show authors affiliations: 1 affiliation

Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp, Belgium |

Publication type: Journal Article

Publication date: 2014-12-10

American Chemical Society (ACS)

Journal: Journal of Physical Chemistry C

scimago Q1

SJR: 0.957

CiteScore: 6.5

Impact factor: 3.3

ISSN: 19327447, 19327455

DOI: 10.1021/jp5108872

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Surfaces, Coatings and Films

Electronic, Optical and Magnetic Materials

Physical and Theoretical Chemistry

General Energy

Abstract

Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in the microelectronics industry, albeit little is known about the fundamental differences compared to the ...

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CITATIONS

29 Total citations

12 Recent citations

2.36 Field Citation Ratio

n/a Relative Citation Ratio

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Tinck S., Neyts E. C., Bogaerts A. Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching // Journal of Physical Chemistry C. 2014. Vol. 118. No. 51. pp. 30315-30324.

GOST all authors (up to 50) Copy

Tinck S., Neyts E. C., Bogaerts A. Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching // Journal of Physical Chemistry C. 2014. Vol. 118. No. 51. pp. 30315-30324.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1021/jp5108872

UR - https://doi.org/10.1021/jp5108872

TI - Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching

T2 - Journal of Physical Chemistry C

AU - Tinck, Stefan

AU - Neyts, Erik C.

AU - Bogaerts, Annemie

PY - 2014

DA - 2014/12/10

PB - American Chemical Society (ACS)

SP - 30315-30324

IS - 51

VL - 118

SN - 1932-7447

SN - 1932-7455

ER -

BibTex |

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@article{2014_Tinck,

author = {Stefan Tinck and Erik C. Neyts and Annemie Bogaerts},

title = {Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching},

journal = {Journal of Physical Chemistry C},

year = {2014},

volume = {118},

publisher = {American Chemical Society (ACS)},

month = {dec},

url = {https://doi.org/10.1021/jp5108872},

number = {51},

pages = {30315--30324},

doi = {10.1021/jp5108872}

}

MLA

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MLA Copy

Tinck, Stefan, et al. “Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching.” Journal of Physical Chemistry C, vol. 118, no. 51, Dec. 2014, pp. 30315-30324. https://doi.org/10.1021/jp5108872.

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Publisher

American Chemical Society (ACS)

Journal

Journal of Physical Chemistry C

scimago Q1

SJR

0.957

CiteScore

6.5

Impact factor

3.3

ISSN

19327447 (Print)

19327455 (Electronic)