Nano Letters

, том 11 , издание 8 , страницы 3263-3266

n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells.

Yamei Liu ^{1, 2}

Craig L Perkins ¹

Joseph M. Luther ¹

Mark C Hanna ¹

Hsiang-yu Chen ¹

Octavi E Semonin ^{1, 3}

Arthur J. Nozik ^{1, 3}

Randy Ellingson ²

Matthew C Beard ¹

Скрыть аффилиации авторов Показать аффилиации авторов: 3 аффилиации

National Renewable Energy Laboratory, Golden, Colorado, United States |

Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, Ohio, United States |

Chemistry Department, University of Colorado, Boulder, Colorado, United States |

Тип публикации: Journal Article

Дата публикации: 2011-06-27

American Chemical Society (ACS)

Nano Letters

scimago Q1

wos Q1

БС1

SJR: 2.967

CiteScore: 14.9

Impact factor: 9.1

ISSN: 15306984, 15306992

DOI: 10.1021/nl2015729

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PubMed ID: 21688813

General Chemistry

Condensed Matter Physics

General Materials Science

Mechanical Engineering

Bioengineering

Краткое описание

The n-type transition metal oxides (TMO) consisting of molybdenum oxide (MoO(x)) and vanadium oxide (V(2)O(x)) are used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS quantum dot solar cells (QDSC). A 4.4% NREL-certified device based on the MoO(x) HEL is reported with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS quantum dot (QD) layer directly. We find the acting mechanism of the hole extraction layer to be a dipole formed at the MoO(x) and PbS interface enhancing band bending to allow efficient hole extraction from the valence band of the PbS layer by MoO(x). The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoO(x) layer.

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Liu Y. et al. n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells. // Nano Letters. 2011. Vol. 11. No. 8. pp. 3263-3266.

ГОСТ со всеми авторами (до 50) Скопировать

Liu Y., Perkins C. L., Luther J. M., Hanna M. C., Chen H., Semonin O. E., Nozik A. J., Ellingson R., Beard M. C. n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells. // Nano Letters. 2011. Vol. 11. No. 8. pp. 3263-3266.

RIS |

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TY - JOUR

DO - 10.1021/nl2015729

UR - https://doi.org/10.1021/nl2015729

TI - n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells.

T2 - Nano Letters

AU - Liu, Yamei

AU - Perkins, Craig L

AU - Luther, Joseph M.

AU - Hanna, Mark C

AU - Chen, Hsiang-yu

AU - Semonin, Octavi E

AU - Nozik, Arthur J.

AU - Ellingson, Randy

AU - Beard, Matthew C

PY - 2011

DA - 2011/06/27

PB - American Chemical Society (ACS)

SP - 3263-3266

IS - 8

VL - 11

PMID - 21688813

SN - 1530-6984

SN - 1530-6992

ER -

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@article{2011_Liu,

author = {Yamei Liu and Craig L Perkins and Joseph M. Luther and Mark C Hanna and Hsiang-yu Chen and Octavi E Semonin and Arthur J. Nozik and Randy Ellingson and Matthew C Beard},

title = {n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells.},

journal = {Nano Letters},

year = {2011},

volume = {11},

publisher = {American Chemical Society (ACS)},

month = {jun},

url = {https://doi.org/10.1021/nl2015729},

number = {8},

pages = {3263--3266},

doi = {10.1021/nl2015729}

}

MLA

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Liu, Yamei, et al. “n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells..” Nano Letters, vol. 11, no. 8, Jun. 2011, pp. 3263-3266. https://doi.org/10.1021/nl2015729.

Издатель

American Chemical Society (ACS)

Журнал

Nano Letters

scimago Q1

wos Q1

БС1

SJR

2.967

CiteScore

14.9

Impact factor

9.1

ISSN

15306984 (Print)

15306992 (Electronic)