ACS Nano, volume 8, issue 6, pages 5863-5872

Energy level modification in lead sulfide quantum dot thin films through ligand exchange.

Patrick R. Brown 1
Donghoon Kim 2
Ni Zhao 4
Jeffrey A. Grossman 2
Vladimir Bulović 6
Publication typeJournal Article
Publication date2014-06-03
Journal: ACS Nano
scimago Q1
SJR4.593
CiteScore26.0
Impact factor15.8
ISSN19360851, 1936086X
PubMed ID:  24824726
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
The electronic properties of colloidal quantum dots (QDs) are critically dependent on both QD size and surface chemistry. Modification of quantum confinement provides control of the QD bandgap, while ligand-induced surface dipoles present a hitherto underutilized means of control over the absolute energy levels of QDs within electronic devices. Here, we show that the energy levels of lead sulfide QDs, measured by ultraviolet photoelectron spectroscopy, shift by up to 0.9 eV between different chemical ligand treatments. The directions of these energy shifts match the results of atomistic density functional theory simulations and scale with the ligand dipole moment. Trends in the performance of photovoltaic devices employing ligand-modified QD films are consistent with the measured energy level shifts. These results identify surface-chemistry-mediated energy level shifts as a means of predictably controlling the electronic properties of colloidal QD films and as a versatile adjustable parameter in the performance optimization of QD optoelectronic devices.

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