том 27 издание 9 страницы 3326-3331

Multivalency-Induced Band Gap Opening at MoS2 Edges

Тип публикацииJournal Article
Дата публикации2015-05-01
scimago Q1
wos Q1
БС1
SJR2.065
CiteScore12
Impact factor7
ISSN08974756, 15205002
Materials Chemistry
General Chemistry
General Chemical Engineering
Краткое описание
Zigzag edges of monolayer MoS2 and other transition-metal (TM) dichalcogenides are experimentally shown to exhibit strong photoluminescence. Atomic models that have been proposed for these edges, however, are all metallic. Here, we address this puzzle by using first-principles calculations. We found that a more generic electron counting model (ECM) can be developed, which, when coupled with the ability of TM atoms at edges to change their valency from 4+ to 5+, can quantitatively account for the band gap opening at the zigzag edges. Due to the ECM, a 3× periodicity along the zigzag edge is necessary to open the band gap. Moreover, consistent with experiment, oxygen adsorption is shown to open even larger band gaps than intrinsic edges.
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ГОСТ |
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Lucking M. C. et al. Multivalency-Induced Band Gap Opening at MoS2 Edges // Chemistry of Materials. 2015. Vol. 27. No. 9. pp. 3326-3331.
ГОСТ со всеми авторами (до 50) Скопировать
Lucking M. C., Bang J., Terrones H., Sun Y. V., Zhang S. Multivalency-Induced Band Gap Opening at MoS2 Edges // Chemistry of Materials. 2015. Vol. 27. No. 9. pp. 3326-3331.
RIS |
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TY - JOUR
DO - 10.1021/acs.chemmater.5b00398
UR - https://doi.org/10.1021/acs.chemmater.5b00398
TI - Multivalency-Induced Band Gap Opening at MoS2 Edges
T2 - Chemistry of Materials
AU - Lucking, Michael C.
AU - Bang, Junhyeok
AU - Terrones, Humberto
AU - Sun, Yiyang Val
AU - Zhang, Shengbai
PY - 2015
DA - 2015/05/01
PB - American Chemical Society (ACS)
SP - 3326-3331
IS - 9
VL - 27
SN - 0897-4756
SN - 1520-5002
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2015_Lucking,
author = {Michael C. Lucking and Junhyeok Bang and Humberto Terrones and Yiyang Val Sun and Shengbai Zhang},
title = {Multivalency-Induced Band Gap Opening at MoS2 Edges},
journal = {Chemistry of Materials},
year = {2015},
volume = {27},
publisher = {American Chemical Society (ACS)},
month = {may},
url = {https://doi.org/10.1021/acs.chemmater.5b00398},
number = {9},
pages = {3326--3331},
doi = {10.1021/acs.chemmater.5b00398}
}
MLA
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Lucking, Michael C., et al. “Multivalency-Induced Band Gap Opening at MoS2 Edges.” Chemistry of Materials, vol. 27, no. 9, May. 2015, pp. 3326-3331. https://doi.org/10.1021/acs.chemmater.5b00398.