Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield
Publication type: Journal Article
Publication date: 2018-11-07
scimago Q1
wos Q1
SJR: 2.065
CiteScore: 12.0
Impact factor: 7.0
ISSN: 08974756, 15205002
Materials Chemistry
General Chemistry
General Chemical Engineering
Abstract
The control of surface properties of all inorganic cesium lead halide perovskite (CsPbX3; X = Cl, Br, or I) quantum dots (QDs) is essential to achieve excellent stability and high photoluminescence quantum yields (PLQYs). Herein, a facile method was performed to simultaneously enhance the stability and PLQYs of CsPbX3 QDs by a ZnX2/hexane solution post-treatment. We show that the halogen defect on the surface of CsPbX3 QDs can be treated in a controlled way, whereby the “black dots” that adhered on the surface as observed by transmission electron microscopy have be completely removed, resulting in enhanced stability and photoluminescence. The PLQYs of CsPbCl3, CsPbBr3, and CsPbI3 increased from 4, 58, and 63% to 86, 93, and 95%, respectively, and the origin of the “black dots” as well as their transformation mechanism has been demonstrated. As a result, the poly(dimethylsiloxane) composite films created by encapsulating stable and nearly defect-free green-emitting CsPbBr3, the red-emitting K2SiF6:Mn4+ pho...
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314
Total citations:
314
Citations from 2024:
57
(18%)
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GOST
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Li F. et al. Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield // Chemistry of Materials. 2018. Vol. 30. No. 23. pp. 8546-8554.
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Li F., Liu Y., Wang H., Zhan Q., Liu Q. L., Xia Z. Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield // Chemistry of Materials. 2018. Vol. 30. No. 23. pp. 8546-8554.
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RIS
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TY - JOUR
DO - 10.1021/acs.chemmater.8b03442
UR - https://doi.org/10.1021/acs.chemmater.8b03442
TI - Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield
T2 - Chemistry of Materials
AU - Li, Fei
AU - Liu, Ying
AU - Wang, Hongliang
AU - Zhan, Qian
AU - Liu, Quan Lin
AU - Xia, Zhiguo
PY - 2018
DA - 2018/11/07
PB - American Chemical Society (ACS)
SP - 8546-8554
IS - 23
VL - 30
SN - 0897-4756
SN - 1520-5002
ER -
Cite this
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@article{2018_Li,
author = {Fei Li and Ying Liu and Hongliang Wang and Qian Zhan and Quan Lin Liu and Zhiguo Xia},
title = {Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield},
journal = {Chemistry of Materials},
year = {2018},
volume = {30},
publisher = {American Chemical Society (ACS)},
month = {nov},
url = {https://doi.org/10.1021/acs.chemmater.8b03442},
number = {23},
pages = {8546--8554},
doi = {10.1021/acs.chemmater.8b03442}
}
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Li, Fei, et al. “Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield.” Chemistry of Materials, vol. 30, no. 23, Nov. 2018, pp. 8546-8554. https://doi.org/10.1021/acs.chemmater.8b03442.
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