Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.
Publication type: Journal Article
Publication date: 2017-11-16
scimago Q1
wos Q2
SJR: 0.763
CiteScore: 6.0
Impact factor: 3.9
ISSN: 07437463, 15205827
PubMed ID:
29125766
Spectroscopy
Electrochemistry
Condensed Matter Physics
General Materials Science
Surfaces and Interfaces
Abstract
A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.
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86
Total citations:
86
Citations from 2024:
15
(17.44%)
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GOST
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Mun S. et al. Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor. // Langmuir. 2017. Vol. 33. No. 47. pp. 13554-13560.
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Mun S., Park Y., Lee Y. E. K., Sung M. W. Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor. // Langmuir. 2017. Vol. 33. No. 47. pp. 13554-13560.
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TY - JOUR
DO - 10.1021/acs.langmuir.7b02466
UR - https://doi.org/10.1021/acs.langmuir.7b02466
TI - Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.
T2 - Langmuir
AU - Mun, Seohyun
AU - Park, Yoonkyung
AU - Lee, Yong Eun Koo
AU - Sung, Myung Whun
PY - 2017
DA - 2017/11/16
PB - American Chemical Society (ACS)
SP - 13554-13560
IS - 47
VL - 33
PMID - 29125766
SN - 0743-7463
SN - 1520-5827
ER -
Cite this
BibTex (up to 50 authors)
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@article{2017_Mun,
author = {Seohyun Mun and Yoonkyung Park and Yong Eun Koo Lee and Myung Whun Sung},
title = {Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.},
journal = {Langmuir},
year = {2017},
volume = {33},
publisher = {American Chemical Society (ACS)},
month = {nov},
url = {https://doi.org/10.1021/acs.langmuir.7b02466},
number = {47},
pages = {13554--13560},
doi = {10.1021/acs.langmuir.7b02466}
}
Cite this
MLA
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Mun, Seohyun, et al. “Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor..” Langmuir, vol. 33, no. 47, Nov. 2017, pp. 13554-13560. https://doi.org/10.1021/acs.langmuir.7b02466.
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