Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM
Chao Zhang
1, 2
,
Ovidiu Cretu
1
,
Dmitry Kvashnin
3, 4
,
Naoyuki Kawamoto
1
,
Masanori Mitome
1
,
Xi Wang
5
,
Yoshio Bando
1
,
Pavel B. Sorokin
3
,
Dmitri Golberg
1, 2
Publication type: Journal Article
Publication date: 2016-09-09
scimago Q1
wos Q1
SJR: 2.967
CiteScore: 14.9
Impact factor: 9.1
ISSN: 15306984, 15306992
PubMed ID:
27606954
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Abstract
We demonstrate that high resolution transmission electron microscopy (HRTEM) paired with light illumination of a sample and its electrical probing can be utilized for the in situ study of initiated photocurrents in free-standing nanowires. Morphology, phase and crystallographic information from numerous individual CdS nanowires is obtained simultaneously with photocurrent measurements. Our results indicate that elastically bent CdS nanowires possessing a wurtzite structure show statistically unchanged values of ON/OFF (photocurrent/dark current) ratios. Photocurrent spectroscopy reveals red shifts of several nanometers in the cutoff wavelength after nanowire bending. This results from deformation-induced lattice strain and associated changes in the nanowire band structure, as confirmed by selected area electron diffraction (SAED) analyses and density functional tight binding (DFTB) simulations. The ON/OFF ratio stabilities and photocurrent spectroscopy shift of bent CdS nanowires are important clues for future flexible electronics, optoelectronics, and photovoltaics.
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28
Total citations:
28
Citations from 2024:
2
(7%)
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GOST
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Zhang C. et al. Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM // Nano Letters. 2016. Vol. 16. No. 10. pp. 6008-6013.
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Zhang C., Cretu O., Kvashnin D., Kawamoto N., Mitome M., Wang X., Bando Y., Sorokin P. B., Golberg D. Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM // Nano Letters. 2016. Vol. 16. No. 10. pp. 6008-6013.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1021/acs.nanolett.6b01614
UR - https://doi.org/10.1021/acs.nanolett.6b01614
TI - Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM
T2 - Nano Letters
AU - Zhang, Chao
AU - Cretu, Ovidiu
AU - Kvashnin, Dmitry
AU - Kawamoto, Naoyuki
AU - Mitome, Masanori
AU - Wang, Xi
AU - Bando, Yoshio
AU - Sorokin, Pavel B.
AU - Golberg, Dmitri
PY - 2016
DA - 2016/09/09
PB - American Chemical Society (ACS)
SP - 6008-6013
IS - 10
VL - 16
PMID - 27606954
SN - 1530-6984
SN - 1530-6992
ER -
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BibTex (up to 50 authors)
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@article{2016_Zhang,
author = {Chao Zhang and Ovidiu Cretu and Dmitry Kvashnin and Naoyuki Kawamoto and Masanori Mitome and Xi Wang and Yoshio Bando and Pavel B. Sorokin and Dmitri Golberg},
title = {Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM},
journal = {Nano Letters},
year = {2016},
volume = {16},
publisher = {American Chemical Society (ACS)},
month = {sep},
url = {https://doi.org/10.1021/acs.nanolett.6b01614},
number = {10},
pages = {6008--6013},
doi = {10.1021/acs.nanolett.6b01614}
}
Cite this
MLA
Copy
Zhang, Chao, et al. “Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM.” Nano Letters, vol. 16, no. 10, Sep. 2016, pp. 6008-6013. https://doi.org/10.1021/acs.nanolett.6b01614.