Nano Letters, volume 16, issue 10, pages 6008-6013

Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM

Zhang Chao 1, 2
Cretu Ovidiu 1
Kvashnin Dmitry 3, 4
Kawamoto Naoyuki 1
Wang Xi 5
Bando Yoshio 1
Publication typeJournal Article
Publication date2016-09-09
Journal: Nano Letters
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor10.8
ISSN15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Abstract
We demonstrate that high resolution transmission electron microscopy (HRTEM) paired with light illumination of a sample and its electrical probing can be utilized for the in situ study of initiated photocurrents in free-standing nanowires. Morphology, phase and crystallographic information from numerous individual CdS nanowires is obtained simultaneously with photocurrent measurements. Our results indicate that elastically bent CdS nanowires possessing a wurtzite structure show statistically unchanged values of ON/OFF (photocurrent/dark current) ratios. Photocurrent spectroscopy reveals red shifts of several nanometers in the cutoff wavelength after nanowire bending. This results from deformation-induced lattice strain and associated changes in the nanowire band structure, as confirmed by selected area electron diffraction (SAED) analyses and density functional tight binding (DFTB) simulations. The ON/OFF ratio stabilities and photocurrent spectroscopy shift of bent CdS nanowires are important clues for future flexible electronics, optoelectronics, and photovoltaics.

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GOST |
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GOST Copy
Zhang C. et al. Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM // Nano Letters. 2016. Vol. 16. No. 10. pp. 6008-6013.
GOST all authors (up to 50) Copy
Zhang C., Cretu O., Kvashnin D., Kawamoto N., Mitome M., Wang X., Bando Y., Sorokin P. B., Golberg D. Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM // Nano Letters. 2016. Vol. 16. No. 10. pp. 6008-6013.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acs.nanolett.6b01614
UR - https://doi.org/10.1021%2Facs.nanolett.6b01614
TI - Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM
T2 - Nano Letters
AU - Cretu, Ovidiu
AU - Kawamoto, Naoyuki
AU - Zhang, Chao
AU - Kvashnin, Dmitry
AU - Mitome, Masanori
AU - Wang, Xi
AU - Bando, Yoshio
AU - Sorokin, Pavel B.
AU - Golberg, Dmitri
PY - 2016
DA - 2016/09/09 00:00:00
PB - American Chemical Society (ACS)
SP - 6008-6013
IS - 10
VL - 16
SN - 1530-6984
SN - 1530-6992
ER -
BibTex |
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BibTex Copy
@article{2016_Zhang
author = {Ovidiu Cretu and Naoyuki Kawamoto and Chao Zhang and Dmitry Kvashnin and Masanori Mitome and Xi Wang and Yoshio Bando and Pavel B. Sorokin and Dmitri Golberg},
title = {Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM},
journal = {Nano Letters},
year = {2016},
volume = {16},
publisher = {American Chemical Society (ACS)},
month = {sep},
url = {https://doi.org/10.1021%2Facs.nanolett.6b01614},
number = {10},
pages = {6008--6013},
doi = {10.1021/acs.nanolett.6b01614}
}
MLA
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MLA Copy
Zhang, Chao, et al. “Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM.” Nano Letters, vol. 16, no. 10, Sep. 2016, pp. 6008-6013. https://doi.org/10.1021%2Facs.nanolett.6b01614.
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