Nano Letters, volume 17, issue 9, pages 5607-5613

Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

Y S Park 1, 2
Jaehoon Lim 1, 2
Nikolay Makarov 1
2
 
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131, United States
Publication typeJournal Article
Publication date2017-08-04
Journal: Nano Letters
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor10.8
ISSN15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Abstract
Auger recombination is a nonradiative three-particle process wherein the electron-hole recombination energy dissipates as a kinetic energy of a third carrier. Auger decay is enhanced in quantum-dot (QD) forms of semiconductor materials compared to their bulk counterparts. Because this process is detrimental to many prospective applications of the QDs, the development of effective approaches for suppressing Auger recombination has been an important goal in the QD field. One such approach involves "smoothing" of the confinement potential, which suppresses the intraband transition involved in the dissipation of the electron-hole recombination energy. The present study evaluates the effect of increasing "smoothness" of the confinement potential on Auger decay employing a series of CdSe/CdS-based QDs wherein the core and the shell are separated by an intermediate layer of a CdSexS1-x alloy comprised of 1-5 sublayers with a radially tuned composition. As inferred from single-dot measurements, use of the five-step grading scheme allows for strong suppression of Auger decay for both biexcitons and charged excitons. Further, due to nearly identical emissivities of neutral and charged excitons, these QDs exhibit an interesting phenomenon of lifetime blinking for which random fluctuations of a photoluminescence lifetime occur for a nearly constant emission intensity.

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Park Y. S. et al. Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots // Nano Letters. 2017. Vol. 17. No. 9. pp. 5607-5613.
GOST all authors (up to 50) Copy
Park Y. S., Lim J., Makarov N., Klimov V. I. Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots // Nano Letters. 2017. Vol. 17. No. 9. pp. 5607-5613.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1021/acs.nanolett.7b02438
UR - https://doi.org/10.1021/acs.nanolett.7b02438
TI - Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots
T2 - Nano Letters
AU - Park, Y S
AU - Klimov, Victor I.
AU - Lim, Jaehoon
AU - Makarov, Nikolay
PY - 2017
DA - 2017/08/04 00:00:00
PB - American Chemical Society (ACS)
SP - 5607-5613
IS - 9
VL - 17
SN - 1530-6984
SN - 1530-6992
ER -
BibTex |
Cite this
BibTex Copy
@article{2017_Park,
author = {Y S Park and Victor I. Klimov and Jaehoon Lim and Nikolay Makarov},
title = {Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots},
journal = {Nano Letters},
year = {2017},
volume = {17},
publisher = {American Chemical Society (ACS)},
month = {aug},
url = {https://doi.org/10.1021/acs.nanolett.7b02438},
number = {9},
pages = {5607--5613},
doi = {10.1021/acs.nanolett.7b02438}
}
MLA
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MLA Copy
Park, Y. S., et al. “Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots.” Nano Letters, vol. 17, no. 9, Aug. 2017, pp. 5607-5613. https://doi.org/10.1021/acs.nanolett.7b02438.
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