том 18 издание 6 страницы 3885-3892

Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals

Тип публикацииJournal Article
Дата публикации2018-05-15
SCImago Q1
Tоп 10% SCImago
WOS Q1
БС1
SJR2.594
CiteScore13.5
Impact factor9.1
ISSN15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Краткое описание
Two-dimensional (2D) layered metal dichalcogenides can form spiral nanostructures by a screw-dislocation-driven mechanism, which leads to changes in crystal symmetry and layer stackings that introduce attractive physical properties different from their bulk and few-layer nanostructures. However, controllable growth of spirals is challenging and their growth mechanisms are poorly understood. Here, we report the controllable growth of WS2 spiral nanoplates with different stackings by a vapor phase deposition route and investigate their formation mechanisms by combining atomic force microscopy with second harmonic generation imaging. Previously not observed "spiral arm" features could be explained as covered dislocation spiral steps, and the number of spiral arms correlates with the number of screw dislocations initiated at the bottom plane. The supersaturation-dependent growth can generate new screw dislocations from the existing layers, or even new layers templated by existing screw dislocations. Different number of dislocations and orientation of new layers result in distinct morphologies, different layer stackings, and more complex nanostructures, such as triangular spiral nanoplates with hexagonal spiral pattern on top. This work provides the understanding and control of dislocation-driven growth of 2D nanostructures. These spiral nanostructures offer diverse candidates for probing the physical properties of layered materials and exploring new applications in functional nanoelectronic and optoelectronic devices.
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ГОСТ |
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Fan X. et al. Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals // Nano Letters. 2018. Vol. 18. No. 6. pp. 3885-3892.
ГОСТ со всеми авторами (до 50) Скопировать
Fan X., Zhao Y., Zheng W., Li H., Wu X., Hu X., Zhang X., Zhu X., Zhang Q. L., Wang X., Yang B., Jianghua C., Jin S., Pan A. Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals // Nano Letters. 2018. Vol. 18. No. 6. pp. 3885-3892.
RIS |
Цитировать
TY - JOUR
DO - 10.1021/acs.nanolett.8b01210
UR - https://doi.org/10.1021/acs.nanolett.8b01210
TI - Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals
T2 - Nano Letters
AU - Fan, Xiaopeng
AU - Zhao, Yuzhou
AU - Zheng, Weihao
AU - Li, Honglai
AU - Wu, Xueping
AU - Hu, Xuelu
AU - Zhang, Xuehong
AU - Zhu, Xiaoli
AU - Zhang, Q L
AU - Wang, Xiao
AU - Yang, Bin
AU - Jianghua, Chen
AU - Jin, Song
AU - Pan, Anlian
PY - 2018
DA - 2018/05/15
PB - American Chemical Society (ACS)
SP - 3885-3892
IS - 6
VL - 18
PMID - 29763565
SN - 1530-6984
SN - 1530-6992
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2018_Fan,
author = {Xiaopeng Fan and Yuzhou Zhao and Weihao Zheng and Honglai Li and Xueping Wu and Xuelu Hu and Xuehong Zhang and Xiaoli Zhu and Q L Zhang and Xiao Wang and Bin Yang and Chen Jianghua and Song Jin and Anlian Pan},
title = {Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals},
journal = {Nano Letters},
year = {2018},
volume = {18},
publisher = {American Chemical Society (ACS)},
month = {may},
url = {https://doi.org/10.1021/acs.nanolett.8b01210},
number = {6},
pages = {3885--3892},
doi = {10.1021/acs.nanolett.8b01210}
}
MLA
Цитировать
Fan, Xiaopeng, et al. “Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals.” Nano Letters, vol. 18, no. 6, May. 2018, pp. 3885-3892. https://doi.org/10.1021/acs.nanolett.8b01210.
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