Open Access
Nano Letters, volume 18, issue 11, pages 7238-7246
Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy
Zhang Chao
1
,
Kvashnin Dmitry
2, 3
,
Bourgeois Laure
4
,
Sorokin Pavel B.
2, 3
,
Fukata Naoki
5
,
Golberg Dmitri
1, 5
4
Monash Centre for Electron Microscopy and Department of Materials Science and Engineering, Monash University, Victoria 3800, Australia
|
Publication type: Journal Article
Publication date: 2018-10-22
Journal:
Nano Letters
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 10.8
ISSN: 15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Abstract
Research on electromechanical properties of semiconducting nanowires, including plastic behavior of Si nanowires and superb carrier mobility of Ge and Ge/Si core-shell nanowires, has attracted increasing attention. However, to date, there have been no direct experimental studies on crystallography dynamics and its relation to electrical and mechanical properties of Ge/Si core-shell nanowires. In this Letter, we in parallel investigated the crystallography changes and electrical and mechanical behaviors of Ge/Si core-shell nanowires under their deformation in a transmission electron microscope (TEM). The core-shell Ge/Si nanowires were bent and strained in tension to high limits. The nanowire Young's moduli were measured to be up to ∼191 GPa, and tensile strength was in a range of 3-8 GPa. Using high-resolution imaging, we confirmed that under large bending strains, Si shells had irregularly changed to the polycrystalline/amorphous state, whereas Ge cores kept single crystal status with the local lattice strains on the compressed side. The nanowires revealed cyclically changed electronic properties and had decent mechanical robustness. Electron diffraction patterns obtained from in situ TEM, paired with theoretical simulations, implied that nonequilibrium phases of polycrystalline/amorphous Si and β-Sn Ge appearing during the deformations may explain the regarded mechanical robustness and varying conductivities under straining. Finally, atomistic simulations of Ge/Si nanowires showed the pronounced changes in their electronic structure during bending and the appearance of a conductive channel in compressed regions which might also be responsible for the increased conductivity seen in bent nanowires.
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1 publication, 5.56%
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1
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5
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Zhang C. et al. Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy // Nano Letters. 2018. Vol. 18. No. 11. pp. 7238-7246.
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Zhang C., Kvashnin D., Bourgeois L., Fernando J. F. S., Firestein K. L., Sorokin P. B., Fukata N., Golberg D. Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy // Nano Letters. 2018. Vol. 18. No. 11. pp. 7238-7246.
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TY - JOUR
DO - 10.1021/acs.nanolett.8b03398
UR - https://doi.org/10.1021%2Facs.nanolett.8b03398
TI - Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy
T2 - Nano Letters
AU - Zhang, Chao
AU - Kvashnin, Dmitry
AU - Fernando, Joseph F S
AU - Sorokin, Pavel B.
AU - Fukata, Naoki
AU - Golberg, Dmitri
AU - Bourgeois, Laure
AU - Firestein, Konstantin L
PY - 2018
DA - 2018/10/22 00:00:00
PB - American Chemical Society (ACS)
SP - 7238-7246
IS - 11
VL - 18
SN - 1530-6984
SN - 1530-6992
ER -
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@article{2018_Zhang,
author = {Chao Zhang and Dmitry Kvashnin and Joseph F S Fernando and Pavel B. Sorokin and Naoki Fukata and Dmitri Golberg and Laure Bourgeois and Konstantin L Firestein},
title = {Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy},
journal = {Nano Letters},
year = {2018},
volume = {18},
publisher = {American Chemical Society (ACS)},
month = {oct},
url = {https://doi.org/10.1021%2Facs.nanolett.8b03398},
number = {11},
pages = {7238--7246},
doi = {10.1021/acs.nanolett.8b03398}
}
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Zhang, Chao, et al. “Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy.” Nano Letters, vol. 18, no. 11, Oct. 2018, pp. 7238-7246. https://doi.org/10.1021%2Facs.nanolett.8b03398.