Open Access
Open access

Crystallography-Derived Young's Modulus and Tensile Strength of AlN Nanowires as Revealed by in Situ Transmission Electron Microscopy

Тип документаJournal Article
Дата публикации2019-03-13
Название журналаNano Letters
ИздательAmerican Chemical Society
Квартиль по SCImagoQ1
Квартиль по Web of ScienceQ1
Импакт-фактор 202112.26
ISSN15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Краткое описание
Aluminum nitride (AlN) has a unique combination of properties, such as high chemical and thermal stability, nontoxicity, high melting point, large energy band gap, high thermal conductivity, and intensive light emission. This combination makes AlN nanowires (NWs) a prospective material for optoelectronic and field-emission nanodevices. However, there has been very limited information on mechanical properties of AlN NWs that is essential for their reliable utilization in modern technologies. Herein, we thoroughly study mechanical properties of individual AlN NWs using direct,  in situ bending and tensile tests inside a high-resolution TEM. Overall, 22 individual NWs have been tested, and a strong dependence of their Young's moduli and ultimate tensile strengths (UTS) on their growth axis crystallographic orientation is documented. The Young's modulus of NWs grown along the [101̅1] orientation is found to be in a range 160-260 GPa, whereas for those grown along the [0002] orientation it falls within a range 350-440 GPa. In situ TEM tensile tests demonstrate the UTS values up to 8.2 GPa for the [0002]-oriented NWs, which is more than 20 times larger than that of a bulk AlN compound. Such properties make AlN nanowires a highly promising material for the reinforcing applications in metal matrix and other composites. Finally, experimental results were compared and verified under a density functional theory simulation, which shows the pronounced effect of growth axis on the AlN NW mechanical behavior. The modeling reveals that with an increasing NW width the Young's modulus tends to approach the elastic constants of a bulk material.
Пристатейные ссылки: 52
Цитируется в публикациях: 7
Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy
Zhang C., Kvashnin D.G., Bourgeois L., Fernando J.F., Firestein K., Sorokin P.B., Fukata N., Golberg D.
Q1 Nano Letters 2018 цитирований: 11
Open Access
Open access
Characterization of TiB2-AlN composites for application as cutting tool
Peçanha L.A., Monteiro S.N., Tomaz Í.D., Oliveira M.M., Ramalho A.M., Simonassi N.T., Braga F.D.
Q1 Journal of Materials Research and Technology 2018 цитирований: 12
Open Access
Open access
Comparison of different interatomic potentials for MD simulations of AlN
Xiang H., Li H., Peng X.
Q1 Computational Materials Science 2017 цитирований: 14
Mechanical behaviors of nanowires
Chen Y., An X., Liao X.
Q1 Applied Physics Reviews 2017 цитирований: 31
Open Access
Open access
The Mechanical Properties of Nanowires
Wang S., Shan Z., Huang H.
Q1 Advanced Science 2017 цитирований: 90
Open Access
Open access
Electrical transport properties of single-crystal Al nanowires
Brunbauer F.M., Bertagnolli E., Majer J., Lugstein A.
Q1 Nanotechnology 2016 цитирований: 19
Evolutions of microstructure and mechanical properties for Mg-Al/AlN composites under hot extrusion
Chen J., Bao C., Chen F.
Q1 Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing 2016 цитирований: 23
A Vertically Integrated Junctionless Nanowire Transistor
Lee B., Hur J., Kang M., Bang T., Ahn D., Lee D., Kim K., Choi Y.
Q1 Nano Letters 2016 цитирований: 49
SiC nanowire reinforced carbon/carbon composites with improved interlaminar strength
Qingliang S., Hejun L., Lu L., Yunyu L., Qiangang F., Hongjiao L., Qiang S.
Q1 Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing 2016 цитирований: 25
Nanostructured Materials for Room-Temperature Gas Sensors
Zhang J., Liu X., Neri G., Pinna N.
Q1 Advanced Materials 2015 цитирований: 829
Piezoresistive AFM cantilevers surpassing standard optical beam deflection in low noise topography imaging
Dukic M., Adams J.D., Fantner G.E.
Q1 Scientific Reports 2015 цитирований: 46
Open Access
Open access
Semiconductor-Nanowire-Based Superconducting Qubit
Larsen T. ., Petersson K. ., Kuemmeth F., Jespersen T. ., Krogstrup P., Nygård J., Marcus C. .
Q1 Physical Review Letters 2015 цитирований: 173
Open Access
Open access
Mode Profiling of Semiconductor Nanowire Lasers
Saxena D., Wang F., Gao Q., Mokkapati S., Tan H.H., Jagadish C.
Q1 Nano Letters 2015 цитирований: 52
Charting the complete elastic properties of inorganic crystalline compounds
de Jong M., Chen W., Angsten T., Jain A., Notestine R., Gamst A., Sluiter M., Krishna Ande C., van der Zwaag S., Plata J.J., Toher C., Curtarolo S., Ceder G., Persson K.A., Asta M.
Q1 Scientific data 2015 цитирований: 375
Open Access
Open access
Fabrication and characteristics of melt-spun Al ribbons reinforced with nano/micro-BN phases
Yamaguchi M., Bernhardt J., Faerstein K., Shtansky D., Bando Y., Golovin I.S., Sinning H., Golberg D.
Q1 Acta Materialia 2013 цитирований: 31
Метрики
Поделиться
Цитировать
ГОСТ |
Цитировать
1. Firestein K.L. и др. Crystallography-Derived Young’s Modulus and Tensile Strength of AlN Nanowires as Revealed by in Situ Transmission Electron Microscopy // Nano Letters. 2019. Т. 19. № 3. С. 2084–2091.
RIS |
Цитировать

TY - JOUR

DO - 10.1021/acs.nanolett.9b00263

UR - http://dx.doi.org/10.1021/acs.nanolett.9b00263

TI - Crystallography-Derived Young’s Modulus and Tensile Strength of AlN Nanowires as Revealed by in Situ Transmission Electron Microscopy

T2 - Nano Letters

AU - Firestein, Konstantin L.

AU - Kvashnin, Dmitry G.

AU - Fernando, Joseph F.S.

AU - Zhang, Chao

AU - Siriwardena, Dumindu P.

AU - Sorokin, Pavel B.

AU - Golberg, Dmitri V.

PY - 2019

DA - 2019/02/21

PB - American Chemical Society (ACS)

SP - 2084-2091

IS - 3

VL - 19

SN - 1530-6984

SN - 1530-6992

ER -

BibTex |
Цитировать

@article{2019,

doi = {10.1021/acs.nanolett.9b00263},

url = {https://doi.org/10.1021%2Facs.nanolett.9b00263},

year = 2019,

month = {feb},

publisher = {American Chemical Society ({ACS})},

volume = {19},

number = {3},

pages = {2084--2091},

author = {Konstantin L. Firestein and Dmitry G. Kvashnin and Joseph F.S. Fernando and Chao Zhang and Dumindu P. Siriwardena and Pavel B. Sorokin and Dmitri V. Golberg},

title = {Crystallography-Derived Young's Modulus and Tensile Strength of {AlN} Nanowires as Revealed by in Situ Transmission Electron Microscopy}

}

MLA
Цитировать
Firestein, Konstantin L. et al. “Crystallography-Derived Young’s Modulus and Tensile Strength of AlN Nanowires as Revealed by in Situ Transmission Electron Microscopy.” Nano Letters 19.3 (2019): 2084–2091. Crossref. Web.