том 10 издание 50 страницы 43831-43841

Highly Sensitive Air-Stable Easily Processable Gas Sensors Based on Langmuir-Schaefer Monolayer Organic Field-Effect Transistors for Multiparametric H2S and NH3 Real-Time Detection.

Тип публикацииJournal Article
Дата публикации2018-11-22
scimago Q1
wos Q1
БС1
SJR1.921
CiteScore14.5
Impact factor8.2
ISSN19448244, 19448252
General Materials Science
Краткое описание
A combination of low limit of detection, low power consumption, and portability makes organic field-effect transistor (OFET) chemical sensors promising for various applications in the areas of industrial safety control, food spoilage detection, and medical diagnostics. However, the OFET sensors typically lack air stability and restoration capability at room temperature. Here, we report on a new design of highly sensitive gas sensors based on Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2- b][1]-benzothiophene. The devices fabricated are able to operate in air and allow an ultrafast detection of different analytes at low concentrations down to tens of parts per billion. The sensors are reusable and can be utilized in real-time air-quality monitoring systems. We show that a direct current response of the LS OFET can be split into the alteration of various transistor parameters, responsible for the interactions with different toxic gases. The sensor response acquiring approach developed allows distinguishing two different gases, H2S and NH3, with a single sensing device. The results reported open new perspectives for the OFET-based gas-sensing technology and pave the way for easy detection of the other types of gases, enabling the development of complex air analysis systems based on a single sensor.
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ГОСТ |
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Sizov A. S. et al. Highly Sensitive Air-Stable Easily Processable Gas Sensors Based on Langmuir-Schaefer Monolayer Organic Field-Effect Transistors for Multiparametric H2S and NH3 Real-Time Detection. // ACS applied materials & interfaces. 2018. Vol. 10. No. 50. pp. 43831-43841.
ГОСТ со всеми авторами (до 50) Скопировать
Sizov A. S., Trul A. A., Chekusova V., Borshchev O. V., Vasiliev A., Agina E. V., Ponomarenko S. A. Highly Sensitive Air-Stable Easily Processable Gas Sensors Based on Langmuir-Schaefer Monolayer Organic Field-Effect Transistors for Multiparametric H2S and NH3 Real-Time Detection. // ACS applied materials & interfaces. 2018. Vol. 10. No. 50. pp. 43831-43841.
RIS |
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TY - JOUR
DO - 10.1021/acsami.8b15427
UR - https://doi.org/10.1021/acsami.8b15427
TI - Highly Sensitive Air-Stable Easily Processable Gas Sensors Based on Langmuir-Schaefer Monolayer Organic Field-Effect Transistors for Multiparametric H2S and NH3 Real-Time Detection.
T2 - ACS applied materials & interfaces
AU - Sizov, Alexey S
AU - Trul, Askold A.
AU - Chekusova, Viktoriya
AU - Borshchev, Oleg V.
AU - Vasiliev, Alexey
AU - Agina, Elena V.
AU - Ponomarenko, Sergey A.
PY - 2018
DA - 2018/11/22
PB - American Chemical Society (ACS)
SP - 43831-43841
IS - 50
VL - 10
PMID - 30465602
SN - 1944-8244
SN - 1944-8252
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2018_Sizov,
author = {Alexey S Sizov and Askold A. Trul and Viktoriya Chekusova and Oleg V. Borshchev and Alexey Vasiliev and Elena V. Agina and Sergey A. Ponomarenko},
title = {Highly Sensitive Air-Stable Easily Processable Gas Sensors Based on Langmuir-Schaefer Monolayer Organic Field-Effect Transistors for Multiparametric H2S and NH3 Real-Time Detection.},
journal = {ACS applied materials & interfaces},
year = {2018},
volume = {10},
publisher = {American Chemical Society (ACS)},
month = {nov},
url = {https://doi.org/10.1021/acsami.8b15427},
number = {50},
pages = {43831--43841},
doi = {10.1021/acsami.8b15427}
}
MLA
Цитировать
Sizov, Alexey S., et al. “Highly Sensitive Air-Stable Easily Processable Gas Sensors Based on Langmuir-Schaefer Monolayer Organic Field-Effect Transistors for Multiparametric H2S and NH3 Real-Time Detection..” ACS applied materials & interfaces, vol. 10, no. 50, Nov. 2018, pp. 43831-43841. https://doi.org/10.1021/acsami.8b15427.