ACS applied materials & interfaces, volume 11, issue 29, pages 26047-26052

Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells

Publication typeJournal Article
Publication date2019-07-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor9.5
ISSN19448244, 19448252
General Materials Science
Abstract
PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and low-cost method to effectively recover the device performance and stability. Our optimization results show that a 10 min treatment is the best condition, resulting in an enhanced power conversion efficiency from 6.9% for the as-prepared device to 9% for the plasma treated one. Moreover, our modified device shows long-term shelf-life stability.

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Tavakoli Dastjerdi H. et al. Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells // ACS applied materials & interfaces. 2019. Vol. 11. No. 29. pp. 26047-26052.
GOST all authors (up to 50) Copy
Tavakoli Dastjerdi H., Tavakoli R., Yadav P., Prochowicz D., SALIBA M. J., Tavakoli M. H. Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells // ACS applied materials & interfaces. 2019. Vol. 11. No. 29. pp. 26047-26052.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsami.9b08466
UR - https://doi.org/10.1021/acsami.9b08466
TI - Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells
T2 - ACS applied materials & interfaces
AU - Tavakoli Dastjerdi, Hadi
AU - Tavakoli, Mohammad Hossein
AU - Tavakoli, Rouhollah
AU - Yadav, P.K.
AU - Prochowicz, D.
AU - SALIBA, MICHAEL J.
PY - 2019
DA - 2019/07/01 00:00:00
PB - American Chemical Society (ACS)
SP - 26047-26052
IS - 29
VL - 11
SN - 1944-8244
SN - 1944-8252
ER -
BibTex |
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BibTex Copy
@article{2019_Tavakoli Dastjerdi,
author = {Hadi Tavakoli Dastjerdi and Mohammad Hossein Tavakoli and Rouhollah Tavakoli and P.K. Yadav and D. Prochowicz and MICHAEL J. SALIBA},
title = {Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells},
journal = {ACS applied materials & interfaces},
year = {2019},
volume = {11},
publisher = {American Chemical Society (ACS)},
month = {jul},
url = {https://doi.org/10.1021/acsami.9b08466},
number = {29},
pages = {26047--26052},
doi = {10.1021/acsami.9b08466}
}
MLA
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MLA Copy
Tavakoli Dastjerdi, Hadi, et al. “Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells.” ACS applied materials & interfaces, vol. 11, no. 29, Jul. 2019, pp. 26047-26052. https://doi.org/10.1021/acsami.9b08466.
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