ACS Nano, volume 14, issue 12, pages 16576-16589
Atomic and Electronic Structure of a Multidomain GeTe Crystal
Frolov Alexander S
1, 2
,
Callaert Carolien
4
,
Hadermann Joke
4
,
Fedorov A. V.
3, 5, 6
,
Usachov D. Yu.
7
,
Chaika A.N
8
,
Walls Brian C
9
,
Shvets Igor V.
9
,
Muntwiler Matthias
10
,
Amati M.
11
,
Gregoratti Luca
11
,
Rader O.
3
,
Yashina Lada V.
1, 2
3
Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring
BESSY-II, Albert-Einstein-Straße 15, D-12489 Berlin, Germany
|
4
6
Joint Lab Functional Quantum Materials at BESSY−II, Albert-Einstein-Straße 15, D-12489 Berlin, Germany
|
9
CRANN, School of Physics, Trinity College Dublin, Dublin 2, Ireland
|
10
11
Elettra−Sincrotrone Trieste S.C.p.A., Area Science
Park, I-34012 Basovizza, Trieste, Italy
|
Publication type: Journal Article
Publication date: 2020-11-02
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
Renewed interest in the ferroelectric semiconductor germanium telluride was recently triggered by the direct observation of a giant Rashba effect and a 30-year-old dream about a functional spin field-effect transistor. In this respect, all-electrical control of the spin texture in this material in combination with ferroelectric properties at the nanoscale would create advanced functionalities in spintronics and data information processing. Here, we investigate the atomic and electronic properties of GeTe bulk single crystals and their (111) surfaces. We succeeded in growing crystals possessing solely inversion domains of ∼10 nm thickness parallel to each other. Using HAADF-TEM we observe two types of domain boundaries, one of them being similar in structure to the van der Waals gap in layered materials. This structure is responsible for the formation of surface domains with preferential Te-termination (∼68%) as we determined using photoelectron diffraction and XPS. The lateral dimensions of the surface domains are in the range of ∼10-100 nm, and both Ge- and Te-terminations reveal no reconstruction. Using spin-ARPES we establish an intrinsic quantitative relationship between the spin polarization of pure bulk states and the relative contribution of different terminations, a result that is consistent with a reversal of the spin texture of the bulk Rashba bands for opposite configurations of the ferroelectric polarization within individual nanodomains. Our findings are important for potential applications of ferroelectric Rashba semiconductors in nonvolatile spintronic devices with advanced memory and computing capabilities at the nanoscale.
Citations by journals
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1
2
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Physical Review B
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2 publications, 12.5%
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Advanced Materials
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2 publications, 12.5%
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Journal of Physical Chemistry C
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Journal of Physical Chemistry C
2 publications, 12.5%
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Nanoscale
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1 publication, 6.25%
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1 publication, 6.25%
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npj 2D Materials and Applications
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1 publication, 6.25%
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Angewandte Chemie
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1 publication, 6.25%
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Angewandte Chemie - International Edition
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Angewandte Chemie - International Edition
1 publication, 6.25%
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Journal of Materials Chemistry A
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1 publication, 6.25%
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RSC Advances
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RSC Advances
1 publication, 6.25%
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Physical Review Materials
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1 publication, 6.25%
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1 publication, 6.25%
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1
2
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Citations by publishers
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1
2
3
4
5
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Wiley
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Wiley
5 publications, 31.25%
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Royal Society of Chemistry (RSC)
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3 publications, 18.75%
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American Physical Society (APS)
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American Physical Society (APS)
3 publications, 18.75%
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American Chemical Society (ACS)
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American Chemical Society (ACS)
2 publications, 12.5%
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American Association for the Advancement of Science (AAAS)
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American Association for the Advancement of Science (AAAS)
1 publication, 6.25%
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Springer Nature
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Springer Nature
1 publication, 6.25%
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1
2
3
4
5
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Frolov A. S. et al. Atomic and Electronic Structure of a Multidomain GeTe Crystal // ACS Nano. 2020. Vol. 14. No. 12. pp. 16576-16589.
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Frolov A. S., Sánchez-Barriga J., Callaert C., Hadermann J., Fedorov A. V., Usachov D. Y., Chaika A., Walls B. C., Zhussupbekov K., Shvets I. V., Muntwiler M., Amati M., Gregoratti L., Varykhalov A., Rader O., Yashina L. V. Atomic and Electronic Structure of a Multidomain GeTe Crystal // ACS Nano. 2020. Vol. 14. No. 12. pp. 16576-16589.
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TY - JOUR
DO - 10.1021/acsnano.0c05851
UR - https://doi.org/10.1021%2Facsnano.0c05851
TI - Atomic and Electronic Structure of a Multidomain GeTe Crystal
T2 - ACS Nano
AU - Callaert, Carolien
AU - Walls, Brian C
AU - Frolov, Alexander S
AU - Hadermann, Joke
AU - Fedorov, A. V.
AU - Usachov, D. Yu.
AU - Chaika, A.N
AU - Zhussupbekov, Kuanysh
AU - Muntwiler, Matthias
AU - Rader, O.
AU - Yashina, Lada V.
AU - Sánchez-Barriga, J.
AU - Shvets, Igor V.
AU - Amati, M.
AU - Gregoratti, Luca
AU - Varykhalov, Andrei
PY - 2020
DA - 2020/11/02 00:00:00
PB - American Chemical Society (ACS)
SP - 16576-16589
IS - 12
VL - 14
SN - 1936-0851
SN - 1936-086X
ER -
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@article{2020_Frolov,
author = {Carolien Callaert and Brian C Walls and Alexander S Frolov and Joke Hadermann and A. V. Fedorov and D. Yu. Usachov and A.N Chaika and Kuanysh Zhussupbekov and Matthias Muntwiler and O. Rader and Lada V. Yashina and J. Sánchez-Barriga and Igor V. Shvets and M. Amati and Luca Gregoratti and Andrei Varykhalov},
title = {Atomic and Electronic Structure of a Multidomain GeTe Crystal},
journal = {ACS Nano},
year = {2020},
volume = {14},
publisher = {American Chemical Society (ACS)},
month = {nov},
url = {https://doi.org/10.1021%2Facsnano.0c05851},
number = {12},
pages = {16576--16589},
doi = {10.1021/acsnano.0c05851}
}
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Frolov, Alexander S., et al. “Atomic and Electronic Structure of a Multidomain GeTe Crystal.” ACS Nano, vol. 14, no. 12, Nov. 2020, pp. 16576-16589. https://doi.org/10.1021%2Facsnano.0c05851.