The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface
4
Wyss Institute of Biologically Inspired Engineering, 60 Oxford Street, Cambridge, Massachusetts 02138, United States
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Publication type: Journal Article
Publication date: 2018-09-18
scimago Q1
wos Q1
SJR: 4.497
CiteScore: 24.2
Impact factor: 16.0
ISSN: 19360851, 1936086X
PubMed ID:
30226988
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon-halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form MTS/S(CH2)9NHCOCH nX3- n//Ga2O3/EGaIn (where M = Ag and Au and X = CH3, F, Cl, Br, I). Within the limits of statistical significance, these rates of tunneling are insensitive to the nature of the terminal group at the interface between the SAM and the Ga2O3. The results are relevant to the origin of an apparent inconsistency in the literature concerning the influence of halogen atoms at the SAM//electrode interface on the tunneling current density.
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Baghbanzadeh M. et al. The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface // ACS Nano. 2018. Vol. 12. No. 10. pp. 10221-10230.
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Baghbanzadeh M., Pieters P. F., Yuan L., Collison D., Whitesides G. M. The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface // ACS Nano. 2018. Vol. 12. No. 10. pp. 10221-10230.
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TY - JOUR
DO - 10.1021/acsnano.8b05217
UR - https://doi.org/10.1021/acsnano.8b05217
TI - The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface
T2 - ACS Nano
AU - Baghbanzadeh, Mostafa
AU - Pieters, Priscilla F
AU - Yuan, Li
AU - Collison, Darrell
AU - Whitesides, George M.
PY - 2018
DA - 2018/09/18
PB - American Chemical Society (ACS)
SP - 10221-10230
IS - 10
VL - 12
PMID - 30226988
SN - 1936-0851
SN - 1936-086X
ER -
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BibTex (up to 50 authors)
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@article{2018_Baghbanzadeh,
author = {Mostafa Baghbanzadeh and Priscilla F Pieters and Li Yuan and Darrell Collison and George M. Whitesides},
title = {The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface},
journal = {ACS Nano},
year = {2018},
volume = {12},
publisher = {American Chemical Society (ACS)},
month = {sep},
url = {https://doi.org/10.1021/acsnano.8b05217},
number = {10},
pages = {10221--10230},
doi = {10.1021/acsnano.8b05217}
}
Cite this
MLA
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Baghbanzadeh, Mostafa, et al. “The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface.” ACS Nano, vol. 12, no. 10, Sep. 2018, pp. 10221-10230. https://doi.org/10.1021/acsnano.8b05217.
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