ACS Photonics, volume 4, issue 4, pages 950-956
PbS-Decorated WS2 Phototransistors with Fast Response
Publication type: Journal Article
Publication date: 2017-03-21
Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
Tungsten disulfide (WS2), as a typical metal dichalcogenides (TMDs), has aroused keen research interests in photodetection. Here, field effect phototransistors (FEpTs) based on heterojunction between monolayer WS2 and PbS colloidal quantum dots are demonstrated to show high photoresponsivity (up to ∼14 A/W), wide electric bandwidth (∼396 Hz), and excellent stability. Meanwhile, the devices exhibit fast photoresponse times of ∼153 μs (rise time) and ∼226 μs (fall time) due to the assistance of heterojunction on the transfer of photoexcitons. Therefore, excellent device performances strongly underscore monolayer WS2–PbS quantum dot as a promising material for future photoelectronic applications.
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TY - JOUR
DO - 10.1021/acsphotonics.6b01049
UR - https://doi.org/10.1021/acsphotonics.6b01049
TI - PbS-Decorated WS2 Phototransistors with Fast Response
T2 - ACS Photonics
AU - Yang, Junbo
PY - 2017
DA - 2017/03/21
PB - American Chemical Society (ACS)
SP - 950-956
IS - 4
VL - 4
SN - 2330-4022
ER -
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@article{2017_Yu,
author = {Junbo Yang},
title = {PbS-Decorated WS2 Phototransistors with Fast Response},
journal = {ACS Photonics},
year = {2017},
volume = {4},
publisher = {American Chemical Society (ACS)},
month = {mar},
url = {https://doi.org/10.1021/acsphotonics.6b01049},
number = {4},
pages = {950--956},
doi = {10.1021/acsphotonics.6b01049}
}
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Yu., Yu., et al. “PbS-Decorated WS2 Phototransistors with Fast Response.” ACS Photonics, vol. 4, no. 4, Mar. 2017, pp. 950-956. https://doi.org/10.1021/acsphotonics.6b01049.