Accounts of Chemical Research, volume 43, issue 2, pages 190-200

Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering

Publication typeJournal Article
Publication date2009-10-14
Q1
Q1
SJR5.948
CiteScore31.4
Impact factor16.4
ISSN00014842, 15204898
PubMed ID:  19827808
General Chemistry
General Medicine
Abstract
Semiconductor nanocrystals are tiny light-emitting particles on the nanometer scale. Researchers have studied these particles intensely and have developed them for broad applications in solar energy conversion, optoelectronic devices, molecular and cellular imaging, and ultrasensitive detection. A major feature of semiconductor nanocrystals is the quantum confinement effect, which leads to spatial enclosure of the electronic charge carriers within the nanocrystal. Because of this effect, researchers can use the size and shape of these “artificial atoms” to widely and precisely tune the energy of discrete electronic energy states and optical transitions. As a result, researchers can tune the light emission from these particles throughout the ultraviolet, visible, near-infrared, and mid-infrared spectral ranges. These particles also span the transition between small molecules and bulk crystals, instilling novel optical properties such as carrier multiplication, single-particle blinking, and spectral diffusion. In addition, semiconductor nanocrystals provide a versatile building block for developing complex nanostructures such as superlattices and multimodal agents for molecular imaging and targeted therapy. In this Account, we discuss recent advances in the understanding of the atomic structure and optical properties of semiconductor nanocrystals. We also discuss new strategies for band gap and electronic wave function engineering to control the location of charge carriers. New methodologies such as alloying, doping, strain-tuning, and band-edge warping will likely play key roles in the further development of these particles for optoelectronic and biomedical applications.

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GOST Copy
Smith A. M., Nie S. Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering // Accounts of Chemical Research. 2009. Vol. 43. No. 2. pp. 190-200.
GOST all authors (up to 50) Copy
Smith A. M., Nie S. Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering // Accounts of Chemical Research. 2009. Vol. 43. No. 2. pp. 190-200.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1021/ar9001069
UR - https://doi.org/10.1021/ar9001069
TI - Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering
T2 - Accounts of Chemical Research
AU - Smith, Andrew M.
AU - Nie, Shuming
PY - 2009
DA - 2009/10/14
PB - American Chemical Society (ACS)
SP - 190-200
IS - 2
VL - 43
PMID - 19827808
SN - 0001-4842
SN - 1520-4898
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2009_Smith,
author = {Andrew M. Smith and Shuming Nie},
title = {Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering},
journal = {Accounts of Chemical Research},
year = {2009},
volume = {43},
publisher = {American Chemical Society (ACS)},
month = {oct},
url = {https://doi.org/10.1021/ar9001069},
number = {2},
pages = {190--200},
doi = {10.1021/ar9001069}
}
MLA
Cite this
MLA Copy
Smith, Andrew M., and Shuming Nie. “Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering.” Accounts of Chemical Research, vol. 43, no. 2, Oct. 2009, pp. 190-200. https://doi.org/10.1021/ar9001069.
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