том 133 издание 8 страницы 2605-2612

Ultrahigh Mobility in Polymer Field-Effect Transistors by Design

Тип публикацииJournal Article
Дата публикации2011-02-03
scimago Q1
wos Q1
БС1
SJR5.554
CiteScore22.5
Impact factor15.6
ISSN00027863, 15205126
General Chemistry
Catalysis
Biochemistry
Colloid and Surface Chemistry
Краткое описание
In this article, the design paradigm involving molecular weight, alkyl substituents, and donor-acceptor interaction for the poly[2,6-(4,4-bis-alkyl-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (cyclopentadithiophene-benzothiadiazole) donor-acceptor copolymer (CDT-BTZ) toward field-effect transistors (FETs) with ultrahigh mobilities is presented and discussed. It is shown that the molecular weight plays a key role in improving hole mobilities, reaching an exceptionally high value of up to 3.3 cm(2) V(-1) s(-1). Possible explanations for this observation is highlighted in conjunction with thin film morphology and crystallinity. Hereby, it is found that the former does not change, whereas, at the same time, crystallinity improved with ever growing molecular weight. Furthermore, other important structural design factors such as alkyl chain substituents and donor-acceptor interaction between the polymer backbones potentially govern intermolecular stacking distances crucial for charge transport and hence for device performance. In this aspect, for the first time we attempt to shed light onto donor-acceptor interactions between neighboring polymer chains with the help of solid state nuclear magnetic resonance (NMR). On the basis of our results, polymer design principles are inferred that might be of relevance for prospective semiconductors exhibiting hole mobilities even exceeding 3 cm(2) V(-1) s(-1).
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ГОСТ |
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Tsao H. N. et al. Ultrahigh Mobility in Polymer Field-Effect Transistors by Design // Journal of the American Chemical Society. 2011. Vol. 133. No. 8. pp. 2605-2612.
ГОСТ со всеми авторами (до 50) Скопировать
Tsao H. N., Cho D. M., Park I., Hansen M. R., Mavrinskiy A., Yoon Y., Graf R., Pisula W., Spiess H., Müllen K. Ultrahigh Mobility in Polymer Field-Effect Transistors by Design // Journal of the American Chemical Society. 2011. Vol. 133. No. 8. pp. 2605-2612.
RIS |
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TY - JOUR
DO - 10.1021/ja108861q
UR - https://doi.org/10.1021/ja108861q
TI - Ultrahigh Mobility in Polymer Field-Effect Transistors by Design
T2 - Journal of the American Chemical Society
AU - Tsao, Hoi Nok
AU - Cho, Don M
AU - Park, Insun
AU - Hansen, Michael Ryan
AU - Mavrinskiy, Alexey
AU - Yoon, Y
AU - Graf, Robert
AU - Pisula, Wojciech
AU - Spiess, Hans-Wolfgang
AU - Müllen, Klaus
PY - 2011
DA - 2011/02/03
PB - American Chemical Society (ACS)
SP - 2605-2612
IS - 8
VL - 133
PMID - 21291267
SN - 0002-7863
SN - 1520-5126
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2011_Tsao,
author = {Hoi Nok Tsao and Don M Cho and Insun Park and Michael Ryan Hansen and Alexey Mavrinskiy and Y Yoon and Robert Graf and Wojciech Pisula and Hans-Wolfgang Spiess and Klaus Müllen},
title = {Ultrahigh Mobility in Polymer Field-Effect Transistors by Design},
journal = {Journal of the American Chemical Society},
year = {2011},
volume = {133},
publisher = {American Chemical Society (ACS)},
month = {feb},
url = {https://doi.org/10.1021/ja108861q},
number = {8},
pages = {2605--2612},
doi = {10.1021/ja108861q}
}
MLA
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Tsao, Hoi Nok, et al. “Ultrahigh Mobility in Polymer Field-Effect Transistors by Design.” Journal of the American Chemical Society, vol. 133, no. 8, Feb. 2011, pp. 2605-2612. https://doi.org/10.1021/ja108861q.