Ultrahigh Mobility in Polymer Field-Effect Transistors by Design
Publication type: Journal Article
Publication date: 2011-02-03
scimago Q1
wos Q1
SJR: 5.554
CiteScore: 22.5
Impact factor: 15.6
ISSN: 00027863, 15205126
PubMed ID:
21291267
General Chemistry
Catalysis
Biochemistry
Colloid and Surface Chemistry
Abstract
In this article, the design paradigm involving molecular weight, alkyl substituents, and donor-acceptor interaction for the poly[2,6-(4,4-bis-alkyl-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (cyclopentadithiophene-benzothiadiazole) donor-acceptor copolymer (CDT-BTZ) toward field-effect transistors (FETs) with ultrahigh mobilities is presented and discussed. It is shown that the molecular weight plays a key role in improving hole mobilities, reaching an exceptionally high value of up to 3.3 cm(2) V(-1) s(-1). Possible explanations for this observation is highlighted in conjunction with thin film morphology and crystallinity. Hereby, it is found that the former does not change, whereas, at the same time, crystallinity improved with ever growing molecular weight. Furthermore, other important structural design factors such as alkyl chain substituents and donor-acceptor interaction between the polymer backbones potentially govern intermolecular stacking distances crucial for charge transport and hence for device performance. In this aspect, for the first time we attempt to shed light onto donor-acceptor interactions between neighboring polymer chains with the help of solid state nuclear magnetic resonance (NMR). On the basis of our results, polymer design principles are inferred that might be of relevance for prospective semiconductors exhibiting hole mobilities even exceeding 3 cm(2) V(-1) s(-1).
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685
Total citations:
685
Citations from 2024:
26
(3.8%)
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Tsao H. N. et al. Ultrahigh Mobility in Polymer Field-Effect Transistors by Design // Journal of the American Chemical Society. 2011. Vol. 133. No. 8. pp. 2605-2612.
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Tsao H. N., Cho D. M., Park I., Hansen M. R., Mavrinskiy A., Yoon Y., Graf R., Pisula W., Spiess H., Müllen K. Ultrahigh Mobility in Polymer Field-Effect Transistors by Design // Journal of the American Chemical Society. 2011. Vol. 133. No. 8. pp. 2605-2612.
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RIS
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TY - JOUR
DO - 10.1021/ja108861q
UR - https://doi.org/10.1021/ja108861q
TI - Ultrahigh Mobility in Polymer Field-Effect Transistors by Design
T2 - Journal of the American Chemical Society
AU - Tsao, Hoi Nok
AU - Cho, Don M
AU - Park, Insun
AU - Hansen, Michael Ryan
AU - Mavrinskiy, Alexey
AU - Yoon, Y
AU - Graf, Robert
AU - Pisula, Wojciech
AU - Spiess, Hans-Wolfgang
AU - Müllen, Klaus
PY - 2011
DA - 2011/02/03
PB - American Chemical Society (ACS)
SP - 2605-2612
IS - 8
VL - 133
PMID - 21291267
SN - 0002-7863
SN - 1520-5126
ER -
Cite this
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@article{2011_Tsao,
author = {Hoi Nok Tsao and Don M Cho and Insun Park and Michael Ryan Hansen and Alexey Mavrinskiy and Y Yoon and Robert Graf and Wojciech Pisula and Hans-Wolfgang Spiess and Klaus Müllen},
title = {Ultrahigh Mobility in Polymer Field-Effect Transistors by Design},
journal = {Journal of the American Chemical Society},
year = {2011},
volume = {133},
publisher = {American Chemical Society (ACS)},
month = {feb},
url = {https://doi.org/10.1021/ja108861q},
number = {8},
pages = {2605--2612},
doi = {10.1021/ja108861q}
}
Cite this
MLA
Copy
Tsao, Hoi Nok, et al. “Ultrahigh Mobility in Polymer Field-Effect Transistors by Design.” Journal of the American Chemical Society, vol. 133, no. 8, Feb. 2011, pp. 2605-2612. https://doi.org/10.1021/ja108861q.