Journal of the American Chemical Society, volume 140, issue 15, pages 5033-5036

Terahertz HgTe Nanocrystals: Beyond Confinement

Nicolas Goubet ^{1, 2, 3}

Amardeep Jagtap ¹

Clément Livache ^{1, 2, 3}

Bertille Martinez ^{1, 2, 3}

Hervé Portalès ⁴

Xiang-Zhen Xu ^{2, 3}

R.P.S.M. Lobo ^{2, 3}

Benoît Dubertret ^{2, 3}

Emmanuel Lhuillier ¹

Show full list: 9 authors

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Sorbonne Université, CNRS, Institut des Nanosciences de Paris, INSP, F-75005 Paris, France |

LPEM, ESPCI Paris, PSL University, CNRS, F-75005 Paris, France

Sorbonne Université, CNRS, LPEM, F-75005 Paris, France |

⁴

Sorbonne Université, CNRS, De la Molécule aux Nano-objets: Réactivité, Interactions et Spectroscopies, MONARIS, F-75005 Paris, France |

Publication type: Journal Article

Publication date: 2018-04-04

American Chemical Society (ACS)

Journal: Journal of the American Chemical Society

scimago Q1

SJR: 5.489

CiteScore: 24.4

Impact factor: 14.4

ISSN: 00027863, 15205126

DOI: 10.1021/jacs.8b02039

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PubMed ID: 29617124

General Chemistry

Catalysis

Biochemistry

Colloid and Surface Chemistry

Abstract

We report the synthesis of nanocrystals with an optical feature in the THz range. To do so, we develop a new synthetic procedure for the growth of HgTe, HgSe, and HgS nanocrystals, with strong size tunability from 5 to 200 nm. This is used to tune the absorption of the nanocrystals all over the infrared range up to terahertz (from 2 to 65 μm for absorption peak and even 200 μm for cutoff wavelength). The interest for this procedure is not limited to large sizes since for small objects we demonstrate low aggregation and good shape control (i.e., spherical object) while using nonexpansive and simple mercury halogenide precursors. By integrating these nanocrystals into an electrolyte-gated transistor, we evidence a change of carrier density from p-doped to n-doped as the confinement is vanishing.

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