Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
Wei Sun Leong
1
,
Qingqing Ji
2
,
Nannan Mao
1
,
Yimo Han
3
,
Hao-Zhe Wang
1
,
Aaron J Goodman
4
,
Antoine Vignon
2
,
Cong Su
2, 5
,
Yunfan Guo
2
,
Pin Chun Shen
1
,
Zhenfei Gao
2, 6
,
David Muller
3, 7
,
Jing Kong
1, 2
3
Publication type: Journal Article
Publication date: 2018-09-20
scimago Q1
wos Q1
SJR: 5.554
CiteScore: 22.5
Impact factor: 15.6
ISSN: 00027863, 15205126
PubMed ID:
30235414
General Chemistry
Catalysis
Biochemistry
Colloid and Surface Chemistry
Abstract
Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS2 in such junctions was revealed to nucleate from the vertices of multilayered VS2 crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS2, compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics.
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101
Total citations:
101
Citations from 2024:
18
(17.82%)
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GOST
Copy
Leong W. S. et al. Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides // Journal of the American Chemical Society. 2018. Vol. 140. No. 39. pp. 12354-12358.
GOST all authors (up to 50)
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Leong W. S., Ji Q., Mao N., Han Y., Wang H., Goodman A. J., Vignon A., Su C., Guo Y., Shen P. C., Gao Z., Muller D., TISDALE W. A., Kong J. Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides // Journal of the American Chemical Society. 2018. Vol. 140. No. 39. pp. 12354-12358.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1021/jacs.8b07806
UR - https://doi.org/10.1021/jacs.8b07806
TI - Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
T2 - Journal of the American Chemical Society
AU - Leong, Wei Sun
AU - Ji, Qingqing
AU - Mao, Nannan
AU - Han, Yimo
AU - Wang, Hao-Zhe
AU - Goodman, Aaron J
AU - Vignon, Antoine
AU - Su, Cong
AU - Guo, Yunfan
AU - Shen, Pin Chun
AU - Gao, Zhenfei
AU - Muller, David
AU - TISDALE, WILLIAM A.
AU - Kong, Jing
PY - 2018
DA - 2018/09/20
PB - American Chemical Society (ACS)
SP - 12354-12358
IS - 39
VL - 140
PMID - 30235414
SN - 0002-7863
SN - 1520-5126
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2018_Leong,
author = {Wei Sun Leong and Qingqing Ji and Nannan Mao and Yimo Han and Hao-Zhe Wang and Aaron J Goodman and Antoine Vignon and Cong Su and Yunfan Guo and Pin Chun Shen and Zhenfei Gao and David Muller and WILLIAM A. TISDALE and Jing Kong},
title = {Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides},
journal = {Journal of the American Chemical Society},
year = {2018},
volume = {140},
publisher = {American Chemical Society (ACS)},
month = {sep},
url = {https://doi.org/10.1021/jacs.8b07806},
number = {39},
pages = {12354--12358},
doi = {10.1021/jacs.8b07806}
}
Cite this
MLA
Copy
Leong, Wei Sun, et al. “Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides.” Journal of the American Chemical Society, vol. 140, no. 39, Sep. 2018, pp. 12354-12358. https://doi.org/10.1021/jacs.8b07806.