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том 111 издание 51 страницы 18824-18830

Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters

Тип публикацииJournal Article
Дата публикации2007-12-01
scimago Q1
wos Q3
БС1
SJR0.914
CiteScore6.2
Impact factor3.2
ISSN19327447, 19327455
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Physical and Theoretical Chemistry
General Energy
Краткое описание
We have systematically constructed a set of stable silicon nanocluster families with large arbitrary fullerene-type hollows inside. In addition, conglomerate structures are designed by connecting the nanoclusters through pentagonal and hexagonal junctions. The atomic and electronic structure of the proposed objects is investigated using the semiempirical quantum-mechanical method. It is shown that within each family the band gap and the stability are inversely proportional to the particle effective size. The clusters inherit a wide variety of structural and symmetry properties from their parent silicon fullerenes. The conglomerates confine electrons like quasi-molecules with a peculiar electronic structure related to the junctions. Quantum dots and their conglomerates can host guest atoms in their hollows and therefore present a new promising type of nanomaterials with tunable electronic properties.
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Journal of Physical Chemistry A
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ГОСТ |
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Avramov P. V. et al. Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters // Journal of Physical Chemistry C. 2007. Vol. 111. No. 51. pp. 18824-18830.
ГОСТ со всеми авторами (до 50) Скопировать
Avramov P. V., Fedorov D. V., Sorokin P. B., Chernozatonskii L. A., Gordon M. Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters // Journal of Physical Chemistry C. 2007. Vol. 111. No. 51. pp. 18824-18830.
RIS |
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TY - JOUR
DO - 10.1021/jp0777216
UR - https://doi.org/10.1021/jp0777216
TI - Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters
T2 - Journal of Physical Chemistry C
AU - Avramov, Pavel V.
AU - Fedorov, D. V.
AU - Sorokin, Pavel B.
AU - Chernozatonskii, Leonid A.
AU - Gordon, Mark
PY - 2007
DA - 2007/12/01
PB - American Chemical Society (ACS)
SP - 18824-18830
IS - 51
VL - 111
SN - 1932-7447
SN - 1932-7455
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2007_Avramov,
author = {Pavel V. Avramov and D. V. Fedorov and Pavel B. Sorokin and Leonid A. Chernozatonskii and Mark Gordon},
title = {Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters},
journal = {Journal of Physical Chemistry C},
year = {2007},
volume = {111},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/jp0777216},
number = {51},
pages = {18824--18830},
doi = {10.1021/jp0777216}
}
MLA
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Avramov, Pavel V., et al. “Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters.” Journal of Physical Chemistry C, vol. 111, no. 51, Dec. 2007, pp. 18824-18830. https://doi.org/10.1021/jp0777216.