том 115 издание 45 страницы 22089-22109

Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale

Тип публикацииJournal Article
Дата публикации2011-10-11
scimago Q1
wos Q3
БС1
SJR0.914
CiteScore6.2
Impact factor3.2
ISSN19327447, 19327455
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Physical and Theoretical Chemistry
General Energy
Краткое описание
The ability to confine electrons and holes in semiconductor quantum dots (QDs) in the form of excitons creates an electronic structure which is both novel and potentially useful for a variety of applications. Upon optical excitation of the dot, the initial excitonic state may be electronically hot. The relaxation dynamics of this hot exciton is the primary event which controls key processes such as optical gain, hot carrier extraction, and multiple exciton generation. Here, we describe femtosecond state-resolved pump/probe experiments on colloidal CdSe quantum dots that provide the first quantitative measure of excitonic state-to-state transition rates. The measurements and modeling here reveal that there are multiple paths by which hot electrons and hot holes relax. The immediate result is that there is no phonon bottleneck for electrons or holes for excitons in quantum dots. This absence of phonon-based relaxation is confirmed by independent measurements of weak exciton–phonon coupling between the vario...
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ГОСТ |
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Kambhampati P. Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale // Journal of Physical Chemistry C. 2011. Vol. 115. No. 45. pp. 22089-22109.
ГОСТ со всеми авторами (до 50) Скопировать
Kambhampati P. Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale // Journal of Physical Chemistry C. 2011. Vol. 115. No. 45. pp. 22089-22109.
RIS |
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TY - JOUR
DO - 10.1021/jp2058673
UR - https://doi.org/10.1021/jp2058673
TI - Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale
T2 - Journal of Physical Chemistry C
AU - Kambhampati, Patanjali
PY - 2011
DA - 2011/10/11
PB - American Chemical Society (ACS)
SP - 22089-22109
IS - 45
VL - 115
SN - 1932-7447
SN - 1932-7455
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2011_Kambhampati,
author = {Patanjali Kambhampati},
title = {Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale},
journal = {Journal of Physical Chemistry C},
year = {2011},
volume = {115},
publisher = {American Chemical Society (ACS)},
month = {oct},
url = {https://doi.org/10.1021/jp2058673},
number = {45},
pages = {22089--22109},
doi = {10.1021/jp2058673}
}
MLA
Цитировать
Kambhampati, Patanjali. “Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale.” Journal of Physical Chemistry C, vol. 115, no. 45, Oct. 2011, pp. 22089-22109. https://doi.org/10.1021/jp2058673.