Journal of Physical Chemistry C

, том 118 , издание 29 , страницы 16228-16235

Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching

Jing Zhang ¹

Jason Tolentino ²

E Ryan Smith ³

Jian Zhang ⁴

Matthew C Beard ³

Arthur J. Nozik ^{1, 3}

Matt Law ²

Justin C. Johnson ³

Скрыть аффилиации авторов Показать аффилиации авторов: 4 аффилиации

Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80301, United States |

Department of Chemistry, University of California, Irvine, California 92697, United States |

National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401, United States |

⁴

School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China |

Тип публикации: Journal Article

Дата публикации: 2014-07-10

American Chemical Society (ACS)

Journal of Physical Chemistry C

scimago Q1

wos Q3

БС1

SJR: 0.914

CiteScore: 6.2

Impact factor: 3.2

ISSN: 19327447, 19327455

DOI: 10.1021/jp504240u

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Surfaces, Coatings and Films

Electronic, Optical and Magnetic Materials

Physical and Theoretical Chemistry

General Energy

Краткое описание

The temperature-dependent quantum yield of photoluminescence (PL) has been measured in films of various sizes of PbS and PbSe quantum dots (QDs) capped with alkanedithiol ligands with lengths varying from 4 to 20 A. We demonstrate that PL within QD films can provide information about transport in a regime that is relevant to solar photoconversion. The ligand-length dependent PL quenching reveals behavior similar to that of ligand-length dependent carrier mobility determined from field-effect transistor (FET) measurements in the dark. The data are described by a model in which band tail luminescence is quenched upon thermal activation by charge separation and hopping followed by nonradiative recombination. We extract the tunneling parameter β and find values of 1.1 ± 0.2 A–1 except for a value of 0.7 for the smallest QD sample. Changes in the transport mechanism may be due to unique surface faceting or QD-ligand coupling that occurs in small QDs. Furthermore, we compare all-organic capped PbS QD films with...

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Zhang J. et al. Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching // Journal of Physical Chemistry C. 2014. Vol. 118. No. 29. pp. 16228-16235.

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Zhang J., Tolentino J., Smith E. R., Zhang J., Beard M. C., Nozik A. J., Law M., Johnson J. C. Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching // Journal of Physical Chemistry C. 2014. Vol. 118. No. 29. pp. 16228-16235.

RIS |

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TY - JOUR

DO - 10.1021/jp504240u

UR - https://doi.org/10.1021/jp504240u

TI - Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching

T2 - Journal of Physical Chemistry C

AU - Zhang, Jing

AU - Tolentino, Jason

AU - Smith, E Ryan

AU - Zhang, Jian

AU - Beard, Matthew C

AU - Nozik, Arthur J.

AU - Law, Matt

AU - Johnson, Justin C.

PY - 2014

DA - 2014/07/10

PB - American Chemical Society (ACS)

SP - 16228-16235

IS - 29

VL - 118

SN - 1932-7447

SN - 1932-7455

ER -

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@article{2014_Zhang,

author = {Jing Zhang and Jason Tolentino and E Ryan Smith and Jian Zhang and Matthew C Beard and Arthur J. Nozik and Matt Law and Justin C. Johnson},

title = {Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching},

journal = {Journal of Physical Chemistry C},

year = {2014},

volume = {118},

publisher = {American Chemical Society (ACS)},

month = {jul},

url = {https://doi.org/10.1021/jp504240u},

number = {29},

pages = {16228--16235},

doi = {10.1021/jp504240u}

}

MLA

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MLA Скопировать

Zhang, Jing, et al. “Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching.” Journal of Physical Chemistry C, vol. 118, no. 29, Jul. 2014, pp. 16228-16235. https://doi.org/10.1021/jp504240u.

Издатель

American Chemical Society (ACS)

Журнал

Journal of Physical Chemistry C

scimago Q1

wos Q3

БС1

SJR

0.914

CiteScore

6.2

Impact factor

3.2

ISSN

19327447 (Print)

19327455 (Electronic)