The Physical Chemistry of Organic Field-Effect Transistors
1
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974
|
Publication type: Journal Article
Publication date: 1999-12-16
scimago Q1
wos Q3
SJR: 0.742
CiteScore: 5.3
Impact factor: 2.9
ISSN: 15206106, 15205207, 10895647
Materials Chemistry
Surfaces, Coatings and Films
Physical and Theoretical Chemistry
Abstract
This review covers fabrication and performance of organic-based field-effect transistors (FETs). The electronic states of organic solids, crystal growth processes, film alignment and morphology, and charge transport mechanisms are discussed. Discontinuities in the active layers and nonidealities in the device behavior are highlighted, and are presented as opportunities for further physical chemistry investigation.
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371
Total citations:
371
Citations from 2025:
2
(0.54%)
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GOST
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Katz H. E., Bao Z. The Physical Chemistry of Organic Field-Effect Transistors // Journal of Physical Chemistry B. 1999. Vol. 104. No. 4. pp. 671-678.
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Katz H. E., Bao Z. The Physical Chemistry of Organic Field-Effect Transistors // Journal of Physical Chemistry B. 1999. Vol. 104. No. 4. pp. 671-678.
Cite this
RIS
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TY - JOUR
DO - 10.1021/jp992853n
UR - https://doi.org/10.1021/jp992853n
TI - The Physical Chemistry of Organic Field-Effect Transistors
T2 - Journal of Physical Chemistry B
AU - Katz, H E
AU - Bao, Zhenan
PY - 1999
DA - 1999/12/16
PB - American Chemical Society (ACS)
SP - 671-678
IS - 4
VL - 104
SN - 1520-6106
SN - 1520-5207
SN - 1089-5647
ER -
Cite this
BibTex (up to 50 authors)
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@article{1999_Katz,
author = {H E Katz and Zhenan Bao},
title = {The Physical Chemistry of Organic Field-Effect Transistors},
journal = {Journal of Physical Chemistry B},
year = {1999},
volume = {104},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/jp992853n},
number = {4},
pages = {671--678},
doi = {10.1021/jp992853n}
}
Cite this
MLA
Copy
Katz, H. E., and Zhenan Bao. “The Physical Chemistry of Organic Field-Effect Transistors.” Journal of Physical Chemistry B, vol. 104, no. 4, Dec. 1999, pp. 671-678. https://doi.org/10.1021/jp992853n.