volume 1 issue 20 pages 3101-3107

Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition

Yi Zhang 1, 2
Lewis Gomez 1, 2
Fumiaki N Ishikawa 1
Anuj Madaria 1
Koungmin Ryu 1
Chuan Wang 1
Alexander Badmaev 1
1
 
Department of Electrical Engineering
2
 
DEPARTMENT OF CHEMISTRY
Publication typeJournal Article
Publication date2010-10-11
scimago Q1
wos Q1
SJR1.394
CiteScore8.7
Impact factor4.6
ISSN19487185
Physical and Theoretical Chemistry
General Materials Science
Abstract
We report a comparative study and Raman characterization of the formation of graphene on single crystal Ni (111) and polycrystalline Ni substrates using chemical vapor deposition (CVD). Preferential formation of monolayer/bilayer graphene on the single crystal surface is attributed to its atomically smooth surface and the absence of grain boundaries. In contrast, CVD graphene formed on polycrystalline Ni leads to a higher percentage of multilayer graphene (≥3 layers), which is attributed to the presence of grain boundaries in Ni that can serve as nucleation sites for multilayer growth. Micro-Raman surface mapping reveals that the area percentages of monolayer/bilayer graphene are 91.4% for the Ni (111) substrate and 72.8% for the polycrystalline Ni substrate under comparable CVD conditions. The use of single crystal substrates for graphene growth may open ways for uniform high-quality graphene over large areas.
Found 
Found 

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GOST |
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GOST Copy
Zhang Y. et al. Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition // Journal of Physical Chemistry Letters. 2010. Vol. 1. No. 20. pp. 3101-3107.
GOST all authors (up to 50) Copy
Zhang Y., Gomez L., Ishikawa F. N., Madaria A., Ryu K., Wang C., Badmaev A., Zhou C. Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition // Journal of Physical Chemistry Letters. 2010. Vol. 1. No. 20. pp. 3101-3107.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/jz1011466
UR - https://doi.org/10.1021/jz1011466
TI - Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition
T2 - Journal of Physical Chemistry Letters
AU - Zhang, Yi
AU - Gomez, Lewis
AU - Ishikawa, Fumiaki N
AU - Madaria, Anuj
AU - Ryu, Koungmin
AU - Wang, Chuan
AU - Badmaev, Alexander
AU - Zhou, Chongwu
PY - 2010
DA - 2010/10/11
PB - American Chemical Society (ACS)
SP - 3101-3107
IS - 20
VL - 1
SN - 1948-7185
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2010_Zhang,
author = {Yi Zhang and Lewis Gomez and Fumiaki N Ishikawa and Anuj Madaria and Koungmin Ryu and Chuan Wang and Alexander Badmaev and Chongwu Zhou},
title = {Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition},
journal = {Journal of Physical Chemistry Letters},
year = {2010},
volume = {1},
publisher = {American Chemical Society (ACS)},
month = {oct},
url = {https://doi.org/10.1021/jz1011466},
number = {20},
pages = {3101--3107},
doi = {10.1021/jz1011466}
}
MLA
Cite this
MLA Copy
Zhang, Yi, et al. “Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition.” Journal of Physical Chemistry Letters, vol. 1, no. 20, Oct. 2010, pp. 3101-3107. https://doi.org/10.1021/jz1011466.