High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer
Тип публикации: Journal Article
Дата публикации: 2006-12-21
SCImago Q1
Tоп 10% SCImago
WOS Q1
БС1
SJR: 2.594
CiteScore: 13.5
Impact factor: 9.1
ISSN: 15306984, 15306992
PubMed ID:
17212434
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Краткое описание
Individual single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with a 2 nm thick silane-based organic self-assembled monolayer (SAM) gate dielectric have been manufactured. The FETs exhibit a unique combination of excellent device performance parameters. In particular, they operate with a gate-source voltage of only -1 V and exhibit good saturation, large transconductance, and small hysteresis (
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MLA
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ГОСТ
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Weitz R. T. et al. High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer // Nano Letters. 2006. Vol. 7. No. 1. pp. 22-27.
ГОСТ со всеми авторами (до 50)
Скопировать
Weitz R. T., Zschieschang U., Effenberger F., Klauk H., Burghard M., Kern K. High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer // Nano Letters. 2006. Vol. 7. No. 1. pp. 22-27.
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RIS
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TY - JOUR
DO - 10.1021/nl061534m
UR - https://doi.org/10.1021/nl061534m
TI - High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer
T2 - Nano Letters
AU - Weitz, Ralf Thomas
AU - Zschieschang, Ute
AU - Effenberger, Franz
AU - Klauk, H.
AU - Burghard, Marko
AU - Kern, Klaus
PY - 2006
DA - 2006/12/21
PB - American Chemical Society (ACS)
SP - 22-27
IS - 1
VL - 7
PMID - 17212434
SN - 1530-6984
SN - 1530-6992
ER -
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BibTex (до 50 авторов)
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@article{2006_Weitz,
author = {Ralf Thomas Weitz and Ute Zschieschang and Franz Effenberger and H. Klauk and Marko Burghard and Klaus Kern},
title = {High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer},
journal = {Nano Letters},
year = {2006},
volume = {7},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/nl061534m},
number = {1},
pages = {22--27},
doi = {10.1021/nl061534m}
}
Цитировать
MLA
Скопировать
Weitz, Ralf Thomas, et al. “High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer.” Nano Letters, vol. 7, no. 1, Dec. 2006, pp. 22-27. https://doi.org/10.1021/nl061534m.
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