Nano Letters

, том 13 , издание 4 , страницы 1578-1587

PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).

Тип публикации: Journal Article

Дата публикации: 2013-03-07

American Chemical Society (ACS)

Nano Letters

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SJR: 2.594

CiteScore: 13.5

Impact factor: 9.1

ISSN: 15306984, 15306992

DOI: 10.1021/nl304753n

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PubMed ID: 23452235

General Chemistry

Condensed Matter Physics

General Materials Science

Mechanical Engineering

Bioengineering

Краткое описание

PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.

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Liu Y. et al. PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1). // Nano Letters. 2013. Vol. 13. No. 4. pp. 1578-1587.

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Liu Y., Perkins C. L., Liu Yu. PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1). // Nano Letters. 2013. Vol. 13. No. 4. pp. 1578-1587.

RIS |

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TY - JOUR

DO - 10.1021/nl304753n

UR - https://doi.org/10.1021/nl304753n

TI - PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).

T2 - Nano Letters

AU - Liu, Yao

AU - Perkins, Craig L

AU - Liu, Yu

PY - 2013

DA - 2013/03/07

PB - American Chemical Society (ACS)

SP - 1578-1587

IS - 4

VL - 13

PMID - 23452235

SN - 1530-6984

SN - 1530-6992

ER -

BibTex |

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@article{2013_Liu,

author = {Yao Liu and Craig L Perkins and Yu Liu},

title = {PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).},

journal = {Nano Letters},

year = {2013},

volume = {13},

publisher = {American Chemical Society (ACS)},

month = {mar},

url = {https://doi.org/10.1021/nl304753n},

number = {4},

pages = {1578--1587},

doi = {10.1021/nl304753n}

}

MLA

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Liu, Yao, et al. “PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1)..” Nano Letters, vol. 13, no. 4, Mar. 2013, pp. 1578-1587. https://doi.org/10.1021/nl304753n.

Издатель

American Chemical Society (ACS)

Журнал

Nano Letters

SCImago Q1

Tоп 10% SCImago

WOS Q1

БС1