ACS Nano, volume 8, issue 12, pages 12883-12894

High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals

Sergii Yakunin ^{1, 2, 3}

Dmitry N. Dirin ^{2, 3}

Loredana Protesescu ^{2, 3}

Mykhailo Sytnyk ¹

Sajjad Tollabimazraehno ⁴

Markus Humer ¹

Florian Hackl ¹

Thomas Fromherz ¹

Maryna I. Bodnarchuk ^{2, 3}

Maksym V. Kovalenko ^{2, 3}

Wolfgang Heiss ^{1, 5, 6}

Hide authors affiliations Show authors affiliations: 6 affiliations

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstraße 69, Linz 4040, Austria |

Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog-Weg 1, Zurich CH-8093, Switzerland |

EMPA-Swiss Federal Laboratories for Materials Science and Technology, Überlandstraße 129, Dübendorf CH-8600, Switzerland |

⁴

Zentrum für Oberflächen- und Nanoanalytik, University Linz, Altenbergerstraße 69, Linz 4040, Austria |

⁵

Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany |

⁶

Energie Campus Nürnberg (EnCN), Fürther Straße 250, 90429 Nürnberg, Germany |

Publication type: Journal Article

Publication date: 2014-12-08

American Chemical Society (ACS)

Journal: ACS Nano

Quartile SCImago

Quartile WOS

Impact factor: 17.1

ISSN: 19360851, 1936086X

DOI: 10.1021/nn5067478

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General Physics and Astronomy

General Materials Science

General Engineering

Abstract

Highly photoconductive thin films of inorganic-capped PbS nanocrystal quantum dots (QDs) are reported. Stable colloidal dispersions of (NH4)3AsS3-capped PbS QDs were processed by a conventional dip-coating technique into a thin homogeneous film of electronically coupled PbS QDs. Upon drying at 130 °C, (NH4)3AsS3 capping ligands were converted into a thin layer of As2S3, acting as an infrared-transparent semiconducting glue. Photodetectors obtained by depositing such films onto glass substrates with interdigitate electrode structures feature extremely high light responsivity and detectivity with values of more than 200 A/W and 1.2×10(13) Jones, respectively, at infrared wavelengths up to 1400 nm. Importantly, these devices were fabricated and tested under ambient atmosphere. Using a set of time-resolved optoelectronic experiments, the important role played by the carrier trap states, presumably localized on the arsenic-sulfide surface coating, has been elucidated. Foremost, these traps enable a very high photoconductive gain of at least 200. The trap state density as a function of energy has been plotted from the frequency dependence of the photoinduced absorption (PIA), whereas the distribution of lifetimes of these traps was recovered from PIA and photoconductivity (PC) phase spectra. These trap states also have an important impact on carrier dynamics, which led us to propose a kinetic model for trap state filling that consistently describes the experimental photoconductivity transients at various intensities of excitation light. This model also provides realistic values for the photoconductive gain and thus may serve as a useful tool to describe photoconductivity in nanocrystal-based solids.

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Journal of the American Chemical Society	Journal of the American Chemical Society, 3, 4.76% Journal of the American Chemical Society 3 publications, 4.76%
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Nature Photonics	Nature Photonics, 2, 3.17% Nature Photonics 2 publications, 3.17%
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Advanced Materials	Advanced Materials, 2, 3.17% Advanced Materials 2 publications, 3.17%
Advanced Optical Materials	Advanced Optical Materials, 2, 3.17% Advanced Optical Materials 2 publications, 3.17%
Chemistry of Materials	Chemistry of Materials, 2, 3.17% Chemistry of Materials 2 publications, 3.17%
Journal of Physical Chemistry C	Journal of Physical Chemistry C, 2, 3.17% Journal of Physical Chemistry C 2 publications, 3.17%
ACS Photonics	ACS Photonics, 2, 3.17% ACS Photonics 2 publications, 3.17%
Chemical Reviews	Chemical Reviews, 2, 3.17% Chemical Reviews 2 publications, 3.17%
Chemical Communications	Chemical Communications, 2, 3.17% Chemical Communications 2 publications, 3.17%
Proceedings of SPIE - The International Society for Optical Engineering	Proceedings of SPIE - The International Society for Optical Engineering, 2, 3.17% Proceedings of SPIE - The International Society for Optical Engineering 2 publications, 3.17%
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Frontiers in Chemistry	Frontiers in Chemistry, 1, 1.59% Frontiers in Chemistry 1 publication, 1.59%
Nature Electronics	Nature Electronics, 1, 1.59% Nature Electronics 1 publication, 1.59%
NPG Asia Materials	NPG Asia Materials, 1, 1.59% NPG Asia Materials 1 publication, 1.59%
Nano Research	Nano Research, 1, 1.59% Nano Research 1 publication, 1.59%
Nature Communications	Nature Communications, 1, 1.59% Nature Communications 1 publication, 1.59%
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Chinese Physics B	Chinese Physics B, 1, 1.59% Chinese Physics B 1 publication, 1.59%
Journal of Non-Crystalline Solids	Journal of Non-Crystalline Solids, 1, 1.59% Journal of Non-Crystalline Solids 1 publication, 1.59%
Advanced Energy Materials	Advanced Energy Materials, 1, 1.59% Advanced Energy Materials 1 publication, 1.59%
Physica Status Solidi (A) Applications and Materials Science	Physica Status Solidi (A) Applications and Materials Science, 1, 1.59% Physica Status Solidi (A) Applications and Materials Science 1 publication, 1.59%
Angewandte Chemie - International Edition	Angewandte Chemie - International Edition, 1, 1.59% Angewandte Chemie - International Edition 1 publication, 1.59%
Angewandte Chemie	Angewandte Chemie, 1, 1.59% Angewandte Chemie 1 publication, 1.59%
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Citations by publishers

	2 4 6 8 10 12 14 16 18 20
American Chemical Society (ACS)	American Chemical Society (ACS), 19, 30.16% American Chemical Society (ACS) 19 publications, 30.16%
Springer Nature	Springer Nature, 10, 15.87% Springer Nature 10 publications, 15.87%
Wiley	Wiley, 10, 15.87% Wiley 10 publications, 15.87%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 6, 9.52% Royal Society of Chemistry (RSC) 6 publications, 9.52%
IOP Publishing	IOP Publishing, 3, 4.76% IOP Publishing 3 publications, 4.76%
Elsevier	Elsevier, 2, 3.17% Elsevier 2 publications, 3.17%
American Institute of Physics (AIP)	American Institute of Physics (AIP), 2, 3.17% American Institute of Physics (AIP) 2 publications, 3.17%
IEEE	IEEE, 2, 3.17% IEEE 2 publications, 3.17%
SPIE	SPIE, 2, 3.17% SPIE 2 publications, 3.17%
Frontiers Media S.A.	Frontiers Media S.A., 1, 1.59% Frontiers Media S.A. 1 publication, 1.59%
University of Electronic Science and Technology of China	University of Electronic Science and Technology of China, 1, 1.59% University of Electronic Science and Technology of China 1 publication, 1.59%
Pleiades Publishing	Pleiades Publishing, 1, 1.59% Pleiades Publishing 1 publication, 1.59%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 1.59% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 1.59%
	2 4 6 8 10 12 14 16 18 20

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Yakunin S. et al. High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals // ACS Nano. 2014. Vol. 8. No. 12. pp. 12883-12894.

GOST all authors (up to 50) Copy

Yakunin S., Dirin D. N., Protesescu L., Sytnyk M., Tollabimazraehno S., Humer M., Hackl F., Fromherz T., Bodnarchuk M. I., Kovalenko M. V., Heiss W. High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals // ACS Nano. 2014. Vol. 8. No. 12. pp. 12883-12894.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1021/nn5067478

UR - https://doi.org/10.1021/nn5067478

TI - High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals

T2 - ACS Nano

AU - Tollabimazraehno, Sajjad

AU - Humer, Markus

AU - Hackl, Florian

AU - Yakunin, Sergii

AU - Dirin, Dmitry N.

AU - Protesescu, Loredana

AU - Sytnyk, Mykhailo

AU - Fromherz, Thomas

AU - Bodnarchuk, Maryna I.

AU - Kovalenko, Maksym V.

AU - Heiss, Wolfgang

PY - 2014

DA - 2014/12/08 00:00:00

PB - American Chemical Society (ACS)

SP - 12883-12894

IS - 12

VL - 8

SN - 1936-0851

SN - 1936-086X

ER -

BibTex |

Cite this

BibTex Copy

@article{2014_Yakunin,

author = {Sajjad Tollabimazraehno and Markus Humer and Florian Hackl and Sergii Yakunin and Dmitry N. Dirin and Loredana Protesescu and Mykhailo Sytnyk and Thomas Fromherz and Maryna I. Bodnarchuk and Maksym V. Kovalenko and Wolfgang Heiss},

title = {High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals},

journal = {ACS Nano},

year = {2014},

volume = {8},

publisher = {American Chemical Society (ACS)},

month = {dec},

url = {https://doi.org/10.1021/nn5067478},

number = {12},

pages = {12883--12894},

doi = {10.1021/nn5067478}

}

MLA

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MLA Copy

Yakunin, Sergii, et al. “High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals.” ACS Nano, vol. 8, no. 12, Dec. 2014, pp. 12883-12894. https://doi.org/10.1021/nn5067478.

Found error?

Publisher

American Chemical Society (ACS)

Journal

ACS Nano

Quartile SCImago

Quartile WOS

Impact factor

17.1

ISSN

19360851 (Print)
1936086X (Electronic)