Nanoscale, volume 11, issue 42, pages 19814-19822

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors

Matveyev Y. 1, 2
Mikheev Vitalii 2
Negrov Dmitry 2
Zarubin S 2
Kumar Abinash 3
Grimley Everett D. 3
LeBeau James M. 3
Gloskovskii A. 1
Tsymbal E.Y. 2, 4
1
 
Deutsches Elektronen-Synchrotron, 85 Notkestraße, Hamburg, Germany
4
 
Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
Publication typeJournal Article
Publication date2019-10-10
Journal: Nanoscale
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor6.7
ISSN20403364, 20403372
General Materials Science
Abstract

Using standing-waves in HAXPES technique, we reveal non-linear electrostatic potential profile across nanoscale ferroelectric (FE) HfZrO4 layer in memory capacitors for both polarization directions, implying the drift of non-FE charges at interfaces.

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Citations by publishers

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1 publication, 9.09%
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1 publication, 9.09%
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1 publication, 9.09%
1
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GOST Copy
Matveyev Y. et al. Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors // Nanoscale. 2019. Vol. 11. No. 42. pp. 19814-19822.
GOST all authors (up to 50) Copy
Matveyev Y., Mikheev V., Negrov D., Zarubin S., Kumar A., Grimley E. D., LeBeau J. M., Gloskovskii A., Tsymbal E., Zenkevich A. Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors // Nanoscale. 2019. Vol. 11. No. 42. pp. 19814-19822.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1039/c9nr05904k
UR - https://doi.org/10.1039%2Fc9nr05904k
TI - Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors
T2 - Nanoscale
AU - Matveyev, Y.
AU - Mikheev, Vitalii
AU - Negrov, Dmitry
AU - Kumar, Abinash
AU - Grimley, Everett D.
AU - LeBeau, James M.
AU - Gloskovskii, A.
AU - Tsymbal, E.Y.
AU - Zenkevich, A.
AU - Zarubin, S
PY - 2019
DA - 2019/10/10 00:00:00
PB - Royal Society of Chemistry (RSC)
SP - 19814-19822
IS - 42
VL - 11
SN - 2040-3364
SN - 2040-3372
ER -
BibTex |
Cite this
BibTex Copy
@article{2019_Matveyev,
author = {Y. Matveyev and Vitalii Mikheev and Dmitry Negrov and Abinash Kumar and Everett D. Grimley and James M. LeBeau and A. Gloskovskii and E.Y. Tsymbal and A. Zenkevich and S Zarubin},
title = {Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors},
journal = {Nanoscale},
year = {2019},
volume = {11},
publisher = {Royal Society of Chemistry (RSC)},
month = {oct},
url = {https://doi.org/10.1039%2Fc9nr05904k},
number = {42},
pages = {19814--19822},
doi = {10.1039/c9nr05904k}
}
MLA
Cite this
MLA Copy
Matveyev, Y., et al. “Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors.” Nanoscale, vol. 11, no. 42, Oct. 2019, pp. 19814-19822. https://doi.org/10.1039%2Fc9nr05904k.
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