Nanoscale, volume 11, issue 42, pages 19814-19822

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf_0.5Zr_0.5O₂ in functional memory capacitors

Y. Matveyev ^{1, 2}

Vitalii Mikheev ²

Dmitry Negrov ²

S Zarubin ²

Abinash Kumar ³

Everett D. Grimley ³

James M. LeBeau ³

A. Gloskovskii ¹

E.Y. Tsymbal ^{2, 4}

A. Zenkevich ²

Show full list: 10 authors

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Deutsches Elektronen-Synchrotron, 85 Notkestraße, Hamburg, Germany |

Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow region, 141700, Russia |

Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27606, USA |

⁴

Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA |

Publication type: Journal Article

Publication date: 2019-10-10

Royal Society of Chemistry (RSC)

Journal: Nanoscale

scimago Q1

wos Q1

SJR: 1.416

CiteScore: 12.1

Impact factor: 5.8

ISSN: 20403364, 20403372

DOI: 10.1039/c9nr05904k

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General Materials Science

Abstract

Using standing-waves in HAXPES technique, we reveal non-linear electrostatic potential profile across nanoscale ferroelectric (FE) HfZrO₄ layer in memory capacitors for both polarization directions, implying the drift of non-FE charges at interfaces.

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Publisher

Royal Society of Chemistry (RSC)

Journal

Nanoscale

scimago Q1

wos Q1

SJR

1.416

CiteScore

12.1

Impact factor

5.8

ISSN

20403364 (Print)

20403372 (Electronic)

Labs

Laboratory of Functional Materials and Devices for Nanoelectronics

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Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf_0.5Zr_0.5O₂ in functional memory capacitors