Quantum dot photolithography using a quantum dot photoresist composed of an organic–inorganic hybrid coating layer

Quantum dots (QDs) have emerged as an important class of materials for diverse applications such as solid-state lighting, energy conversion, displays, biomedicine, and plasmonics due to their excellent photonic properties and durability. Soft lithography, inkjet printing, nanoimprinting, and polymer deep-pen lithography are primary lithography techniques employed to implement micro-patterns with QDs, however, there are limited reports on QD photolithography using conventional photolithography processes suitable for mass production. This study reports a QD photolithography technique using a custom-developed QD photoresist made of an organic–inorganic hybrid coating layer. Using this QD photoresist, various QD micro-patterns, including red or green micro lines, RGB color filters for smartphone displays at 340 ppi, and atypical micro logo patterns of the Korea University, were successfully fabricated. Furthermore, various process parameters were developed for the QD photolithography with this custom QD photoresist, and the optical properties of the QD films were also investigated. To demonstrate its applicability in contemporary smartphone displays, the color coordinates of the QD films were compared to those of the BT.2020 standard. The chromaticity of the QD photoresist in CIE 1931 color space covered 98.7% of the NTSC (1987) area while providing more expansive color space. Overall, the QD photoresist and its photolithography techniques reported in this study hold great promise in various fields of QD-based applications, including bio-labeling, optical detectors, and solar cells.