Physical Chemistry Chemical Physics, volume 25, issue 5, pages 3890-3899

Selective Etching Mechanism of Silicon Oxide Against Silicon by Hydrogen Fluoride: A Density Functional Theory Study

Romel Hidayat ¹

Hye-Lee Kim ²

Khabib Khumaini ^{1, 3}

Tanzia Chowdhury ¹

Tirta Rona Mayangsari ³

Byungchul Cho ⁴

Sangjoon Park ⁴

Won-Jun Lee ^{1, 2}

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Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea |

Metal-organic Compounds Materials Research Center, Sejong University, Seoul, 05006, Republic of Korea |

Department of Chemistry, Universitas Pertamina, Jakarta 12220, Indonesia |

⁴

Wonik IPS, Pyeongtaek, 17709, Republic of Korea |

Publication type: Journal Article

Publication date: 2023-01-11

Royal Society of Chemistry (RSC)

Journal: Physical Chemistry Chemical Physics

scimago Q2

SJR: 0.721

CiteScore: 5.5

Impact factor: 2.9

ISSN: 14639076, 14639084

DOI: 10.1039/d2cp05456f

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PubMed ID: 36647706

Physical and Theoretical Chemistry

General Physics and Astronomy

Abstract

Selective etching of silicon oxide (SiO₂) against silicon (Si) using anhydrous hydrogen fluoride (HF) vapor has been used for semiconductor device fabrication. We studied the underlying mechanism of the selective...

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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2, 22.22% Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 2 publications, 22.22%
ACS Applied Electronic Materials	ACS Applied Electronic Materials, 2, 22.22% ACS Applied Electronic Materials 2 publications, 22.22%
Applied Surface Science	Applied Surface Science, 1, 11.11% Applied Surface Science 1 publication, 11.11%
ACS applied materials & interfaces	ACS applied materials & interfaces, 1, 11.11% ACS applied materials & interfaces 1 publication, 11.11%
Journal of Vacuum Science and Technology B	Journal of Vacuum Science and Technology B, 1, 11.11% Journal of Vacuum Science and Technology B 1 publication, 11.11%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1, 11.11% Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 1 publication, 11.11%
Advanced Electronic Materials	Advanced Electronic Materials, 1, 11.11% Advanced Electronic Materials 1 publication, 11.11%
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American Vacuum Society	American Vacuum Society, 3, 33.33% American Vacuum Society 3 publications, 33.33%
American Chemical Society (ACS)	American Chemical Society (ACS), 3, 33.33% American Chemical Society (ACS) 3 publications, 33.33%
Elsevier	Elsevier, 1, 11.11% Elsevier 1 publication, 11.11%
IOP Publishing	IOP Publishing, 1, 11.11% IOP Publishing 1 publication, 11.11%
Wiley	Wiley, 1, 11.11% Wiley 1 publication, 11.11%
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Publisher

Royal Society of Chemistry (RSC)

Journal

Physical Chemistry Chemical Physics

scimago Q2

SJR

0.721

CiteScore

5.5

Impact factor

2.9

ISSN

14639076 (Print)

14639084 (Electronic)

Selective Etching Mechanism of Silicon Oxide Against Silicon by Hydrogen Fluoride: A Density Functional Theory Study

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