Journal of Materials Chemistry C, volume 12, issue 3, pages 1020-1029

Proton Damage Effects in Double Polymorph γ/β-Ga2O3 Diodes

Alexander Y Polyakov ¹

A. Vasilev ¹

Anastasiia I. Kochkova ¹

Ivan V. Shchemerov ¹

Eugene B Yakimov ^{1, 2}

Andrej V. Miakonkikh ³

Alexei V. Chernykh ¹

Peter Lagov ^{1, 4}

Yu S Pavlov ⁴

A.S. Doroshkevich ⁵

R Sh Isaev ⁵

A. A. Romanov ¹

Luiza A. Alexanyan ¹

Nikolai Matros ¹

Alexander Azarov ⁶

Andrej Kuznetsov ⁶

Stephen J. Pearton ⁷

Show full list: 17 authors

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National University of Science and Technology MISiS, Moscow, Leninsky pr. 4, Moscow 119049, Russia |

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan Str., Chernogolovka, Moscow Region 142432, Russia |

Valiev Institute of Physics and Technology, Russian Academy of Sciences, Nahimovsky Ave, 36(1), Moscow, 117218, Russia |

⁴

Laboratory of Radiation Technologies, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences, Moscow 119071, Russia |

⁵

Joint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow region, 141980, Russia |

⁶

Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway |

⁷

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA |

Publication type: Journal Article

Publication date: 2024-01-01

Royal Society of Chemistry (RSC)

Journal: Journal of Materials Chemistry C

scimago Q1

wos Q1

SJR: 1.358

CiteScore: 10.8

Impact factor: 5.7

ISSN: 20507526, 20507534

DOI: 10.1039/d3tc04171a

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Materials Chemistry

General Chemistry

Abstract

Double polymorph γ/β-Ga2O3 structures remain crystalline upon unprecedentedly high crystal disorder levels where other semiconductors lose their long-range symmetry and, eventually, become amorphous. However, it is unclear if this radiation...

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Publisher

Royal Society of Chemistry (RSC)

Journal

Journal of Materials Chemistry C

scimago Q1

wos Q1

SJR

1.358

CiteScore

10.8

Impact factor

5.7

ISSN

20507526 (Print)

20507534 (Electronic)

Labs

Laboratory of Ultra-wide Bandgap Semiconductors (LUWS)

Profiles

Proton Damage Effects in Double Polymorph γ/β-Ga2O3 Diodes

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