Journal of Materials Chemistry C, volume 5, issue 44, pages 11515-11521
Benzene-like N6rings in a Be2N6monolayer: a stable 2D semiconductor with high carrier mobility
Publication type: Journal Article
Publication date: 2017-10-03
Journal:
Journal of Materials Chemistry C
Quartile SCImago
Q1
Quartile WOS
Q1
SJR: 1.358
CiteScore: 10.8
Impact factor: 5.7
ISSN: 20507526, 20507534
Materials Chemistry
General Chemistry
Abstract
Abundant delocalized six-centre–two-electron (6c–2e) π-bonds are responsible for the planar configuration and high structural stability of a Be2N6monolayer, which satisfies the Hückel rule [4
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GOST
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Li F. et al. Benzene-like N6rings in a Be2N6monolayer: a stable 2D semiconductor with high carrier mobility // Journal of Materials Chemistry C. 2017. Vol. 5. No. 44. pp. 11515-11521.
GOST all authors (up to 50)
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Li F., Wang Yu., Wu H., Liu Z., Aeberhard U., Li Y. Benzene-like N6rings in a Be2N6monolayer: a stable 2D semiconductor with high carrier mobility // Journal of Materials Chemistry C. 2017. Vol. 5. No. 44. pp. 11515-11521.
Cite this
RIS
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TY - JOUR
DO - 10.1039/c7tc03363j
UR - https://doi.org/10.1039/c7tc03363j
TI - Benzene-like N6rings in a Be2N6monolayer: a stable 2D semiconductor with high carrier mobility
T2 - Journal of Materials Chemistry C
AU - Li, Feng
AU - Liu, Zhifa
AU - Wang, Yu
AU - Wu, Hong
AU - Aeberhard, Urs
AU - Li, Yadong
PY - 2017
DA - 2017/10/03
PB - Royal Society of Chemistry (RSC)
SP - 11515-11521
IS - 44
VL - 5
SN - 2050-7526
SN - 2050-7534
ER -
Cite this
BibTex
Copy
@article{2017_Li,
author = {Feng Li and Zhifa Liu and Yu Wang and Hong Wu and Urs Aeberhard and Yadong Li},
title = {Benzene-like N6rings in a Be2N6monolayer: a stable 2D semiconductor with high carrier mobility},
journal = {Journal of Materials Chemistry C},
year = {2017},
volume = {5},
publisher = {Royal Society of Chemistry (RSC)},
month = {oct},
url = {https://doi.org/10.1039/c7tc03363j},
number = {44},
pages = {11515--11521},
doi = {10.1039/c7tc03363j}
}
Cite this
MLA
Copy
Li, Feng, et al. “Benzene-like N6rings in a Be2N6monolayer: a stable 2D semiconductor with high carrier mobility.” Journal of Materials Chemistry C, vol. 5, no. 44, Oct. 2017, pp. 11515-11521. https://doi.org/10.1039/c7tc03363j.